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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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246 364
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1.04
>100 шт. 0.52
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PHILIPS
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800
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8.59
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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NXP
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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DIOTEC
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2
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5.06
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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INFINEON
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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MCC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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DC COMPONENTS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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GALAXY
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3 389
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2.04
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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OTHER
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12 800
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PHILIPS
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1 424
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ONS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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КИТАЙ
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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NXP
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7 139
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YJ
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151 998
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1.77
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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GALAXY ME
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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HOTTECH
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7 092
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2.07
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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LRC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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KLS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PANJIT
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SEMTECH
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4
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2.80
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGJIE
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGJIE (YJ)
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YOUTAI
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66 605
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2.16
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ZH
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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7 273
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1.86
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ASEMI
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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TRR
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64 800
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1.26
>100 шт. 0.63
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YIXING
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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1
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SUNTAN
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362 604
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1.06
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SHIKUES
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGZHOU YANGJIE
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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MERRYELC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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CTK
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4
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1.50
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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2785
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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765
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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KEEN SIDE
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2 400
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1.84
>100 шт. 0.92
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BUL45D2G |
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Транзистор биполярный большой мощности
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ST MICROELECTRONICS
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BUL45D2G |
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Транзистор биполярный большой мощности
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ON SEMICONDUCTOR
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BUL45D2G |
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Транзистор биполярный большой мощности
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ONS
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BUL45D2G |
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Транзистор биполярный большой мощности
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161.44
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BUL45D2G |
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Транзистор биполярный большой мощности
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ON SEMICONDUCTOR
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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NATIONAL SEMICONDUCTOR
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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NSC
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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130.40
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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NATIONAL SEMICONDUCTOR
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1
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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TEXAS INSTRUMENTS
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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HGSEMI
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1 948
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28.08
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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4-7 НЕДЕЛЬ
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53
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M62359P |
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M62359P |
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M62359P |
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MITSUBISHI
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8
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167.40
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M62359P |
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4-7 НЕДЕЛЬ
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701
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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ST MICROELECTRONICS
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392
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34.10
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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824
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36.63
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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ST MICROELECTRONICS SEMI
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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STMicroelectronics
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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824
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36.63
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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КИТАЙ
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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ST MICROELECTRO
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