| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
|
2N3772 |
|
Транзистор S-N 100В 20A TO3
|
|
11
|
378.00
|
|
|
|
|
2N3772 |
|
Транзистор S-N 100В 20A TO3
|
ONS
|
|
|
|
|
|
|
2N3772 |
|
Транзистор S-N 100В 20A TO3
|
STMicroelectronics
|
|
|
|
|
|
|
2N3772 |
|
Транзистор S-N 100В 20A TO3
|
1
|
|
|
|
|
|
|
BUL39D |
|
Транзистор NPN+Dio 450V 4A 70W
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
BUL39D |
|
Транзистор NPN+Dio 450V 4A 70W
|
|
|
60.00
|
|
|
|
|
BUL39D |
|
Транзистор NPN+Dio 450V 4A 70W
|
STMicroelectronics
|
|
|
|
|
|
 |
SS9012G |
|
|
SAMSUNG
|
|
|
|
|
|
|
SS9012G |
|
|
ПЛАНЕТА
|
|
|
|
|
|
|
SS9012G |
|
|
|
|
5.40
|
|
|
|
|
BSP52T1G |
|
NPN-Darl 80V 1A 0,8W
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
BSP52T1G |
|
NPN-Darl 80V 1A 0,8W
|
|
|
20.00
|
|
|
|
|
BSP52T1G |
|
NPN-Darl 80V 1A 0,8W
|
ONS
|
29 600
|
21.75
|
|
|
|
|
BSP52T1G |
|
NPN-Darl 80V 1A 0,8W
|
HOTTECH
|
25 472
|
11.37
|
|
|
|
|
MJD2955G |
|
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
MJD2955G |
|
|
|
|
360.00
|
|
|
|
|
MJD2955G |
|
|
ONS
|
|
|
|
 |
|
ST13007 |
|
Транзистор биполярный большой мощности NPN 700В, 8A, 80Вт
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
ST13007 |
|
Транзистор биполярный большой мощности NPN 700В, 8A, 80Вт
|
|
|
38.00
|
|
|
|
|
ST13007 |
|
Транзистор биполярный большой мощности NPN 700В, 8A, 80Вт
|
STMicroelectronics
|
|
|
|
|
|
|
ST13007 |
|
Транзистор биполярный большой мощности NPN 700В, 8A, 80Вт
|
ST1
|
|
|
|
|
|
|
ST13007 |
|
Транзистор биполярный большой мощности NPN 700В, 8A, 80Вт
|
ФИЛИППИНЫ
|
|
|
|
|
|
|
2SC3940 |
|
NPN 30V, 1A, 1W, 200MHz
|
MATSUSHITA
|
160
|
48.61
|
|
|
|
|
2SC3940 |
|
NPN 30V, 1A, 1W, 200MHz
|
|
|
|
|
|
|
|
2SC3940 |
|
NPN 30V, 1A, 1W, 200MHz
|
MAT
|
|
|
|
|
|
|
BC846B-13-F |
|
|
DI
|
|
|
|
|
|
|
BC856B-7-F |
|
|
DI
|
|
|
|
|
|
|
BC856B-7-F |
|
|
Diodes Inc
|
|
|
|
|
|
|
BC856B-7-F |
|
|
DIODES
|
|
|
|
|
|
|
BC848BLT1G |
|
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
BC848BLT1G |
|
|
ONS
|
|
|
|
|
|
|
BC848BLT1G |
|
|
ON SEMICONDUCTOR
|
2 685
|
|
|
|
|
|
BC850CLT1G |
|
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
BC850CLT1G |
|
|
ONS
|
2 240
|
2.07
|
|
|
|
|
BC850CLT1G |
|
|
|
|
|
|
|
|
|
BC850CLT1G |
|
|
ON SEMICONDUCTOR
|
2 584
|
|
|
|
|
|
BC850CLT1G |
|
|
SEMTECH
|
|
|
|
|
|
|
BC850CLT1G |
|
|
0.00
|
|
|
|
|
|
|
2N5195G |
|
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
2N5195G |
|
|
|
|
34.40
|
|
|
|
|
2N5195G |
|
|
ONS
|
|
|
|
|
|
|
BC847ALT1G |
|
Транзистор n-p-n UNI 50В 0.1A рулон 3k S
|
ON SEMICONDUCTOR
|
4
|
1.50
|
|
|
|
|
BC847ALT1G |
|
Транзистор n-p-n UNI 50В 0.1A рулон 3k S
|
ON SEMICONDUCTOR
|
5 150
|
|
|
|
|
|
BC847ALT1G |
|
Транзистор n-p-n UNI 50В 0.1A рулон 3k S
|
ONS
|
|
|
|
|
|
|
KSP42BU-NL |
|
|
FAIR
|
|
|
|
|
|
|
MJD112T4G |
|
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
MJD112T4G |
|
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
MJD112T4G |
|
|
ONS
|
|
|
|
|
|
|
MJD112T4G |
|
|
|
|
|
|
|
|
|
MMBT4124 |
|
|
FAIR
|
|
|
|
|
