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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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FCP16N60N |
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N-channel mosfet 600v, 16a, 0.170w
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Fairchild Semiconductor
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FCP16N60N |
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N-channel mosfet 600v, 16a, 0.170w
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FCP16N60N |
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N-channel mosfet 600v, 16a, 0.170w
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FAIRCHILD
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FCP16N60N |
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N-channel mosfet 600v, 16a, 0.170w
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FAIRCHILD
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FCP16N60N |
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N-channel mosfet 600v, 16a, 0.170w
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ONS
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IRFIB6N60APBF |
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Hexfet® power mosfet
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VISHAY
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IRFIB6N60APBF |
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Hexfet® power mosfet
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Vishay/Siliconix
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IRFIB6N60APBF |
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Hexfet® power mosfet
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VISHAY/IR
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IRFIB6N60APBF |
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Hexfet® power mosfet
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IRLR7821 |
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Hexfet power mosfets discrete n-channel
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INTERNATIONAL RECTIFIER
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IRLR7821 |
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Hexfet power mosfets discrete n-channel
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172.00
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IRLR7821 |
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Hexfet power mosfets discrete n-channel
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INFINEON
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTOR
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134 240
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2.10
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTOR
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2 533
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONS-FAIR
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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4.00
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONS
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMIC
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTO
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONSEMICONDUCTOR
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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LRC
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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VBSEMI
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3 493
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2.86
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONSEMI
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128
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2.57
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2N7002MTF |
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N-channel small signal mosfet
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FAIR
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2N7002MTF |
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N-channel small signal mosfet
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Fairchild Semiconductor
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2N7002MTF |
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N-channel small signal mosfet
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FAIRCHILD
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2SJ352 |
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Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
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HITACHI
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2SJ352 |
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Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
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HITACHI SEMICONDUCTOR
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2SJ352 |
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Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
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491.16
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2SJ352 |
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Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
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RENESAS
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AO4407 |
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ALPHA & OMEGA SEMICONDUCTOR
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AO4407 |
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ALPHA & OMEGA SEMICONDUCTOR
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4 336
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AO4407 |
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AO4407 |
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JSMICRO
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1 973
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8.16
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BSL211SP |
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INFINEON
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BSL211SP |
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INFINEON
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BSL211SP |
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Infineon Technologies
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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76 800
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1.07
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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FAIR
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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ON SEMICONDUCTOR
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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UTC
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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INFINEON
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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FAIRCHILD
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2 248
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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OTHER
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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FSC
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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FAIRCHILD SEMICONDUCTORS
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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FAIRCHILD
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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Fairchild Semiconductor
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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DI
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BSS138 |
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N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
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КИТАЙ
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