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DIODE DUAL ESD PROTECTION SOT23 |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Reverse Standoff (Typ) | 12V |
| Voltage - Breakdown | 14.7V |
| Мощность (Ватт) | 180W |
| Polarization | 2 Channel Array - Unidirectional |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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IRF7410 |
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Hexfet power mosfets discrete p-channel | INTERNATIONAL RECTIFIER |
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IRF7410 |
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Hexfet power mosfets discrete p-channel |
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90.80 | ||
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IRF7410 |
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Hexfet power mosfets discrete p-channel | INTERNATIONAL RECTIFIER |
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IRF7410 |
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Hexfet power mosfets discrete p-channel | КИТАЙ |
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IRF7410 |
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Hexfet power mosfets discrete p-channel | INFINEON |
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IRF7410 |
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Hexfet power mosfets discrete p-channel | EVVO | 5 299 | 4.97 | |
| L6924D013TR | ST MICROELECTRONICS |
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| L6924D013TR | ST MICROELECTRONICS SEMI |
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| L6924D013TR | STMicroelectronics |
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| L6924D013TR | 760 | 106.37 | ||||||
| L6924D013TR | 4-7 НЕДЕЛЬ | 787 |
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| NX3225GA-26MHZ | NDK | 1 | 22.42 | |||||
| NX3225GA-26MHZ |
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| STBB1-APUR | 328 | 184.17 | ||||||
| STBB1-APUR | ST MICROELECTRONICS |
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| STBB1-APUR | 328 | 184.17 | ||||||
| STBB1-APUR | STMICROELECTRONICS | 271 | 132.13 | |||||
| STBB1-APUR | 4-7 НЕДЕЛЬ | 130 |
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| STM32F207VGT6 | ST MICROELECTRONICS |
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| STM32F207VGT6 | STMicroelectronics |
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| STM32F207VGT6 | 70 | 1 473.37 | ||||||
| STM32F207VGT6 | МАЛАЙЗИЯ |
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| STM32F207VGT6 | 70 | 1 473.37 | ||||||
| STM32F207VGT6 | 4-7 НЕДЕЛЬ | 711 |
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