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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 5.6A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 92nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1700pF @ 25V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 2512 56 ОМ 5% | 2 800 | 2.61 | ||||||
| EC24-5R6K-5,6 МКГН-10% | 5 | 9.25 | ||||||
| IRF4905STRL | INTERNATIONAL RECTIFIER |
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| IRF4905STRL | INTERNATIONAL RECTIFIER | 1 |
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| IRF4905STRL | INFINEON |
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| IRF4905STRL | YOUTAI | 2 752 | 30.23 | |||||
| LM2576D2T-ADJR4G |
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| LM2576D2T-ADJR4G | ON SEMICONDUCTOR |
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| LM2576D2T-ADJR4G | ONS |
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| LM2576D2T-ADJR4G |
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| LM2576D2T-ADJR4G | 4-7 НЕДЕЛЬ | 788 |
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| RC1206JR-0768KL | YAGEO | 93 602 |
0.85 >1000 шт. 0.17 |
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| RC1206JR-0768KL | YAGEO |
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| RC1206JR-0768KL |
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