| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Бит | 16 |
| Частота амплитудно-импульсной модуляции | 470 |
| Интерфейс подключения | DSP, MICROWIRE™, QSPI™, Serial, SPI™ |
| Число преобразователей | 1 |
| Мощность рассеивания (макс.) | 2.5mW |
| Напряжение питания источника | Analog and Digital |
| Рабочая температура | -40°C ~ 105°C |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 24-TSSOP (0.173", 4.40mm Width) |
| Корпус | 24-TSSOP |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BAV99W |
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(SMD) PBF SOT323
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NXP
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BAV99W |
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(SMD) PBF SOT323
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PHILIPS
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BAV99W |
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(SMD) PBF SOT323
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125 116
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1.94
>100 шт. 0.97
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BAV99W |
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(SMD) PBF SOT323
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DC COMPONENTS
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12 460
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3.74
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BAV99W |
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(SMD) PBF SOT323
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NXP
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4 241
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BAV99W |
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(SMD) PBF SOT323
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PHILIPS
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5 020
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BAV99W |
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(SMD) PBF SOT323
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INFINEON TECH
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BAV99W |
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(SMD) PBF SOT323
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NEXPERIA
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BAV99W |
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(SMD) PBF SOT323
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DIOTEC
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2 700
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1.10
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BAV99W |
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(SMD) PBF SOT323
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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BAV99W |
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(SMD) PBF SOT323
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PHI
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BAV99W |
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(SMD) PBF SOT323
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HOTTECH
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17 803
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1.22
>100 шт. 0.61
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BAV99W |
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(SMD) PBF SOT323
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PANJIT
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BAV99W |
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(SMD) PBF SOT323
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SEMTECH
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BAV99W |
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(SMD) PBF SOT323
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SUNTAN
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12
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2.38
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BAV99W |
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(SMD) PBF SOT323
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KLS
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BAV99W |
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(SMD) PBF SOT323
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1
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BAV99W |
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(SMD) PBF SOT323
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JSCJ
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48 228
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1.77
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BAV99W |
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(SMD) PBF SOT323
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XSEMI
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9 504
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1.86
>100 шт. 0.93
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BAV99W |
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(SMD) PBF SOT323
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KEEN SIDE
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20 055
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1.76
>100 шт. 0.88
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BAV99W |
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(SMD) PBF SOT323
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NXP(PHILIPS)
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BAV99W |
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(SMD) PBF SOT323
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22000
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BAV99W |
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(SMD) PBF SOT323
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32
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BAV99W |
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(SMD) PBF SOT323
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20500
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DS1070-2 MVV6 |
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CONNFLY
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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4 581
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1.79
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONS
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1 680
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8.27
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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3
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7.20
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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1 003
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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GALAXY
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTO
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONSEMICONDUCTOR
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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0.00
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SN75176ADR |
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TEXAS INSTRUMENTS
|
108
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SN75176ADR |
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TEXAS
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ST1S10PUR |
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3 456
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69.62
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ST1S10PUR |
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ST MICROELECTRONICS
|
806
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89.50
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ST1S10PUR |
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ST MICROELECTRONICS SEMI
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ST1S10PUR |
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STMicroelectronics
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ST1S10PUR |
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КИТАЙ
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ST1S10PUR |
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STMICROELECTR
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ST1S10PUR |
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4-7 НЕДЕЛЬ
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124
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Версия для печати
