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MOSFET N-CH DUAL 60V 8A 8-SOIC |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 17.8 mOhm @ 8A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1330pF @ 30V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 0603 - 68 ОМ 5% RC0603JR-0768RL (RS-03K680JT) | FENGHUA |
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AT93C46-10SI-2.7 |
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Последовательная память EEPROM (128x8/64x16 bit, 1M циклов, 3-wire serial interface, 2 ... | ATMEL | 40 | 39.82 | ||
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AT93C46-10SI-2.7 |
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Последовательная память EEPROM (128x8/64x16 bit, 1M циклов, 3-wire serial interface, 2 ... | ATM |
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AT93C46-10SI-2.7 |
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Последовательная память EEPROM (128x8/64x16 bit, 1M циклов, 3-wire serial interface, 2 ... |
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53.48 | |||
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AT93C46-10SI-2.7 |
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Последовательная память EEPROM (128x8/64x16 bit, 1M циклов, 3-wire serial interface, 2 ... | ATMEL CORPORATION | 766 |
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AT93C46-10SI-2.7 |
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Последовательная память EEPROM (128x8/64x16 bit, 1M циклов, 3-wire serial interface, 2 ... | 4-7 НЕДЕЛЬ | 796 |
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| DS1066-04M(MW-4M) | CONNFLY |
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| DS1066-04M(MW-4M) |
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| DS1066-05M(MW-5M) | CONNFLY |
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TX25-30P-LT-H1E |
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JAE Electronics |
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TX25-30P-LT-H1E |
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