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Версия для печати
| FET Feature | Standard |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 4.6A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 4.6A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 870pF @ 10V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
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IRF7205 (P-канальные транзисторные модули) Hexfet Power Mosfet
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BIR-BO03J4G | BRIGHTLED |
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| BIR-BO03J4G |
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42.00 | ||||||
| BIR-BO03J4G | BRI | 11 845 | 6.20 | |||||
| BIR-BO03J4G | 4-7 НЕДЕЛЬ | 468 |
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IRF7328 |
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Hexfet power mosfets dual p-channel | INTERNATIONAL RECTIFIER |
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IRF7328 |
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Hexfet power mosfets dual p-channel |
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99.40 | ||
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IRF7328 |
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Hexfet power mosfets dual p-channel | INFINEON |
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IRF7328 |
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Hexfet power mosfets dual p-channel | EVVO | 2 072 | 6.11 | |
| IRF7342PBF |
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Транзистор 2xP-Ch 55V 3,4A 2,0W 0,105R | INTERNATIONAL RECTIFIER |
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| IRF7342PBF |
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Транзистор 2xP-Ch 55V 3,4A 2,0W 0,105R |
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83.20 | ||||
| IRF7342PBF |
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Транзистор 2xP-Ch 55V 3,4A 2,0W 0,105R | INTERNATIONAL RECTIFIER |
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| IRF7342PBF |
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Транзистор 2xP-Ch 55V 3,4A 2,0W 0,105R | INFINEON |
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| JCG016 [ANTENNA GSM; SMA-M; CABLE 3 M; D29X120MM] | JEC |
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| JCG016 [ANTENNA GSM; SMA-M; CABLE 3 M; D29X120MM] |
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| MAESTRO-100 TCP/IP | FARGO |
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| MAESTRO-100 TCP/IP |
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