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DIODE DUAL ESD PROTECTION SOT23 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Reverse Standoff (Typ) | 12V |
Voltage - Breakdown | 14.7V |
Мощность (Ватт) | 180W |
Polarization | 2 Channel Array - Unidirectional |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | SOT-23-3 |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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IRF7410 |
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Hexfet power mosfets discrete p-channel | INTERNATIONAL RECTIFIER |
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IRF7410 |
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Hexfet power mosfets discrete p-channel |
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90.80 | ||
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IRF7410 |
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Hexfet power mosfets discrete p-channel | INTERNATIONAL RECTIFIER |
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IRF7410 |
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Hexfet power mosfets discrete p-channel | КИТАЙ |
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IRF7410 |
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Hexfet power mosfets discrete p-channel | INFINEON |
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IRF7410 |
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Hexfet power mosfets discrete p-channel | EVVO | 2 131 | 9.40 | |
L6924D013TR | ST MICROELECTRONICS | 148 | 138.09 | |||||
L6924D013TR | ST MICROELECTRONICS SEMI |
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L6924D013TR | STMicroelectronics |
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L6924D013TR | 776 | 106.37 | ||||||
L6924D013TR | 4-7 НЕДЕЛЬ | 612 |
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NX3225GA-26MHZ | NDK | 2 625 | 30.78 | |||||
NX3225GA-26MHZ |
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STBB1-APUR | 332 | 184.17 | ||||||
STBB1-APUR | ST MICROELECTRONICS | 455 | 193.48 | |||||
STBB1-APUR | 332 | 184.17 | ||||||
STBB1-APUR | STMICROELECTRONICS | 927 | 142.13 | |||||
STBB1-APUR | 4-7 НЕДЕЛЬ | 592 |
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STM32F207VGT6 | ST MICROELECTRONICS | 360 | 1 184.54 | |||||
STM32F207VGT6 | STMicroelectronics |
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STM32F207VGT6 | 76 | 1 537.41 | ||||||
STM32F207VGT6 | МАЛАЙЗИЯ |
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STM32F207VGT6 | 76 | 1 537.41 | ||||||
STM32F207VGT6 | 4-7 НЕДЕЛЬ | 670 |
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Корзина
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