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Версия для печати
| Current - Reverse Leakage @ Vr | 10µA @ 800V |
| Current - Average Rectified (Io) | 3A |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 3A |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Diode Type | Standard |
| Скорость | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75ns |
| Тип монтажа | Выводной |
| Корпус (размер) | DO-201AD, Axial |
| Корпус | DO-201AD |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 2SD1651[C] | SAN |
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DM0365R |
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SMPS сх.упp, MOSFET 650V/Idp=2.15A,66kHz,Pout 30w | FAIR |
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DM0365R |
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SMPS сх.упp, MOSFET 650V/Idp=2.15A,66kHz,Pout 30w | 1 | 249.48 | ||
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DM0365R |
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SMPS сх.упp, MOSFET 650V/Idp=2.15A,66kHz,Pout 30w | ONS-FAIR |
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DM0365R |
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SMPS сх.упp, MOSFET 650V/Idp=2.15A,66kHz,Pout 30w | 4-7 НЕДЕЛЬ | 784 |
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IRFS640B | FAIR |
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IRFS640B | FSC |
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IRFS640B | FAIRCHILD |
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IRFS640B | FAIRCHILD |
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IRFS640B |
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STP4NK60Z |
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N-канальный Полевой транзистор MOSFET, VDS,В = 600, ID = 4 A, Ptot | ST MICROELECTRONICS |
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STP4NK60Z |
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N-канальный Полевой транзистор MOSFET, VDS,В = 600, ID = 4 A, Ptot |
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123.56 | ||
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STP4NK60Z |
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N-канальный Полевой транзистор MOSFET, VDS,В = 600, ID = 4 A, Ptot | ST MICROELECTRONICS SEMI |
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STP4NK60Z |
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N-канальный Полевой транзистор MOSFET, VDS,В = 600, ID = 4 A, Ptot | STMicroelectronics |
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STP4NK60Z |
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N-канальный Полевой транзистор MOSFET, VDS,В = 600, ID = 4 A, Ptot | КИТАЙ |
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