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Rds On (Max) @ Id, Vgs | 45 Ohm @ 120mA, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | SIPMOS® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 120mA |
Vgs(th) (Max) @ Id | 2.3V @ 94µA |
Gate Charge (Qg) @ Vgs | 6.6nC @ 10V |
Input Capacitance (Ciss) @ Vds | 150pF @ 25V |
Power - Max | 1.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | PG-SOT223-4 |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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ADC128D818CIMT/NOPB |
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National Semiconductor |
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ADC128D818CIMT/NOPB |
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TEXAS |
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ADC128D818CIMT/NOPB |
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ADC128D818CIMT/NOPB |
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NATIONAL SEMICONDUCTOR | 612 |
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ADuM2400ARWZ |
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ANALOG DEVICES |
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ADUM2400ARWZ |
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Analog Devices Inc |
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ADUM2400ARWZ |
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ADUM2400ARWZ |
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4-7 НЕДЕЛЬ | 476 |
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ADUM6000ARWZ | ANALOG DEVICES |
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ADUM6000ARWZ | Analog Devices Inc |
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ADUM6000ARWZ |
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ADUM6000ARWZ | 4-7 НЕДЕЛЬ | 596 |
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NUD3105LT1G | ON SEMICONDUCTOR |
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NUD3105LT1G | ON SEMICONDUCTOR |
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NUD3105LT1G |
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NUD3105LT1G | ONS |
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SI8600AD-B-IS |
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Silicon Laboratories Inc |
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SI8600AD-B-IS |
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SI8600AD-B-IS |
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4-7 НЕДЕЛЬ | 519 |
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Корзина
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