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MOSFET N-CH 30V 8.8A PQFN |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 8.5A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 8.8A |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) @ Vgs | 8.7nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 600pF @ 25V |
| Power - Max | 2.1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-PowerVQFN |
| Корпус | 6-PQFN (2x2) |
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 47МКФ 400 (16X32)105°C |
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| BQ24725RGRR | TEXAS INSTRUMENTS |
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| BQ24725RGRR | TEXAS INSTRUMENTS |
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FDS8884 |
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N-channel powertrench mosfet | FAIRCHILD SEMICONDUCTORS |
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FDS8884 |
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FDS8884 |
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FDS8884 |
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N-channel powertrench mosfet |
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FDS8884 |
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N-channel powertrench mosfet | КИТАЙ |
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FDS8884 |
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FDS8884 |
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FDS8884 |
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N-channel powertrench mosfet | FSC |
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FDS8884 |
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FDS8884 |
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N-channel powertrench mosfet | ONS |
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IRFH8325TR2PBF |
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International Rectifier |
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| ТАНТАЛ 330МКФ 10В20%ТИПE |
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