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Версия для печати
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 16.2 mOhm @ 7.6A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 7.6A, 11A |
| Vgs(th) (Max) @ Id | 2.25V @ 25µA |
| Gate Charge (Qg) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 910pF @ 15V |
| Power - Max | 1.4W, 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
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IRF7904PBF (MOSFET) HEXFET Power MOSFETs Dual N-Channel
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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AD7795BRUZ-REEL |
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Analog Devices Inc |
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AD7795BRUZ-REEL |
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ANALOG DEVICES |
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AD7795BRUZ-REEL |
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AD7795BRUZ-REEL |
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ADI |
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| DS1070-3M (WF-03) P.C.B. РАЗЪЕМ ШАГ 2.54ММ 3 КОНТАКТА ПАПА CONNFLY |
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| RT0805BRD0710KL | YAGEO | 19 | 3.47 | |||||
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| ST1S10PUR | 3 456 | 69.62 | ||||||
| ST1S10PUR | ST MICROELECTRONICS | 806 | 106.00 | |||||
| ST1S10PUR | ST MICROELECTRONICS SEMI |
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| ST1S10PUR | STMicroelectronics |
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| ST1S10PUR | КИТАЙ |
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| ST1S10PUR | STMICROELECTR |
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| ST1S10PUR | 4-7 НЕДЕЛЬ | 124 |
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TAJE477K010RNJ |
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AVX Corporation |
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TAJE477K010RNJ |
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AVX | 928 | 72.27 | ||
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TAJE477K010RNJ |
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TAJE477K010RNJ |
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AVX |
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TAJE477K010RNJ |
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KYOCERA-AVX |
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