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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 3A, 10V |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 290pF @ 25V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| DS1070-3M (WF-03) P.C.B. РАЗЪЕМ ШАГ 2.54ММ 3 КОНТАКТА ПАПА CONNFLY |
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| RT0805BRD0710KL | YAGEO | 95 690 | 1.97 | |||||
| RT0805BRD0710KL |
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| ST1S10PUR | 3 456 | 68.48 | ||||||
| ST1S10PUR | ST MICROELECTRONICS | 806 | 105.00 | |||||
| ST1S10PUR | ST MICROELECTRONICS SEMI |
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| ST1S10PUR | STMicroelectronics |
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| ST1S10PUR | КИТАЙ |
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| ST1S10PUR | STMICROELECTR |
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| ST1S10PUR | 4-7 НЕДЕЛЬ | 124 |
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| ST232BDR | 768 | 54.33 | ||||||
| ST232BDR | ST MICROELECTRONICS |
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| ST232BDR | ST MICROELECTRONICS SEMI |
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| ST232BDR | STMicroelectronics |
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| ST232BDR | МАРОККО |
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| ST232BDR | ST MICROELECTRO |
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| ST232BDR | STMICROELECTR |
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| ST232BDR | YOUTAI | 3 062 | 20.75 | |||||
| ST232BDR | UMW | 3 680 | 26.86 | |||||
| ST232BDR | UMW-YOUTAI |
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| ST232BDR | 4-7 НЕДЕЛЬ | 68 |
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TAJE477K010RNJ |
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AVX Corporation |
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TAJE477K010RNJ |
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AVX | 1 650 | 75.21 | ||
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TAJE477K010RNJ |
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TAJE477K010RNJ |
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AVX |
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TAJE477K010RNJ |
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KYOCERA-AVX |
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