FQPF8N60C
MOSFET 600v n-канальный транзистор,TO220
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MOSFET N-CH 600V 7.5A TO-220F |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | QFET™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.75A, 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 7.5A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1255pF @ 25V |
| Power - Max | 48W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 Full Pack |
| Корпус | TO-220F |
| Product Change Notification | Design/Process Change Notification 26/June/2007 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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FQPF8N60C (MOSFET) 600V N-Channel MOSFET
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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DC COMPONENTS | 58 012 | 1.02 | ||
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MIC | 324 931 | 1.48 | ||
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DIOTEC | 71 806 | 2.80 | ||
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ON SEMICONDUCTOR |
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LD |
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FAIRCHILD | 288 |
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GENERAL SEMICONDUCTOR | 1 |
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ON SEMICONDUCTOR |
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PANJIT | 307 692 |
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TAIWAN SEMICONDUCTOR MANF. |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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MICROSEMI CORP |
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KINGTRONICS |
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YJ | 184 475 | 1.39 | ||
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КИТАЙ | 879 | 5.47 | ||
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ONS |
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LGE | 27 | 1.54 | ||
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HOTTECH | 60 724 | 1.06 | ||
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KLS | 31 200 | 2.07 | ||
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YS | 2 311 | 1.38 | ||
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YANGJIE | 33 456 | 1.47 | ||
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MC |
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CHINA |
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UNKNOWN |
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KEHE |
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SUNTAN | 40 062 | 1.18 | ||
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TWGMC | 28 087 |
1.47 >500 шт. 0.49 |
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JUXING | 85 | 1.65 | ||
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ASEMI | 1 |
1.46 >100 шт. 0.73 |
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YANGZHOU YANGJIE |
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KEEN SIDE | 365 522 |
1.12 >100 шт. 0.56 |
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MERRYELC | 212 786 | 1.56 | ||
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TRR | 542 640 |
1.36 >100 шт. 0.68 |
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71682 |
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2SC5446 |
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Биполярный транзистор NPN hi-res (1700V, 18A, 200W, Tf<150nS) | TOSHIBA | 8 | 480.19 | |
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2SC5446 |
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Биполярный транзистор NPN hi-res (1700V, 18A, 200W, Tf<150nS) | 1 | 524.16 | ||
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2SC5446 |
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Биполярный транзистор NPN hi-res (1700V, 18A, 200W, Tf<150nS) | TOS |
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FAN7601N |
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SMPS упpавление MOSFET, Fmax=300kHz | FAIR |
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FAN7601N |
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SMPS упpавление MOSFET, Fmax=300kHz |
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120.00 | ||
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FAN7601N |
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SMPS упpавление MOSFET, Fmax=300kHz | FAIRCHILD |
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FAN7601N |
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SMPS упpавление MOSFET, Fmax=300kHz | FAIRCHILD |
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FAN7601N |
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SMPS упpавление MOSFET, Fmax=300kHz | Fairchild Semiconductor |
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FAN7601N |
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SMPS упpавление MOSFET, Fmax=300kHz | FSC1 |
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FAN7601N |
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SMPS упpавление MOSFET, Fmax=300kHz | FSC |
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FAN7601N |
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SMPS упpавление MOSFET, Fmax=300kHz | ONS |
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FAN7601N |
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SMPS упpавление MOSFET, Fmax=300kHz | 4-7 НЕДЕЛЬ | 661 |
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FQPF3N80C |
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800v n-channel mosfet | FAIR |
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FQPF3N80C |
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800v n-channel mosfet | FSC |
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FQPF3N80C |
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800v n-channel mosfet | FAIRCHILD |
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FQPF3N80C |
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FQPF3N80C |
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800v n-channel mosfet | Fairchild Semiconductor |
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FQPF3N80C |
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800v n-channel mosfet | КОРЕЯ РЕСПУБЛИК |
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FQPF3N80C |
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800v n-channel mosfet |
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154.80 | ||
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FQPF3N80C |
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800v n-channel mosfet | FSC1 |
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FQPF3N80C |
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800v n-channel mosfet | ONS |
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| OB2269CP | 4-7 НЕДЕЛЬ | 750 |
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