|
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 2.2A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 1.9A |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) @ Vgs | 5.9nC @ 5V |
Input Capacitance (Ciss) @ Vds | 235pF @ 10V |
Power - Max | 460mW |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | 3-SSOT |
Product Change Notification | Mold Compound Change 07/Dec/2007 Mold Compound Change 08/April/2008 |
FDN357N (MOSFET) N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производитель:
|
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
06033A101KAT2A | AVX | |||||||
06033A101KAT2A | AVX | |||||||
06033A101KAT2A | AVX Corporation | |||||||
06033A101KAT2A | ||||||||
BSH108 | N-channel enhancement mode field-effect transistor | PHILIPS | ||||||
BSH108 | N-channel enhancement mode field-effect transistor | PHILIPS | 17 | |||||
BSH108 | N-channel enhancement mode field-effect transistor | NXP | ||||||
BSH108 | N-channel enhancement mode field-effect transistor | |||||||
BZX84-C5V1 | Стабилитрон универсальный SMD 0.225 Вт, 5.1 V | NXP | ||||||
BZX84-C5V1 | Стабилитрон универсальный SMD 0.225 Вт, 5.1 V | PHILIPS | ||||||
BZX84-C5V1 | Стабилитрон универсальный SMD 0.225 Вт, 5.1 V | NXP | 5 300 | |||||
BZX84-C5V1 | Стабилитрон универсальный SMD 0.225 Вт, 5.1 V | PHILIPS | 26 835 | |||||
MMBD914 | FAIR | |||||||
MMBD914 | 8 | 6.00 | ||||||
MMBD914 | FAIRCHILD | |||||||
MMBD914 | INFINEON | |||||||
MMBD914 | FAIRCHILD | 826 | ||||||
MMBD914 | INFINEON | 32 | ||||||
MMBD914 | MCC | |||||||
MMBD914 | Fairchild Semiconductor | |||||||
MMBD914 | ONS-FAIR | |||||||
MMBD914 | PANJIT | 30 720 | ||||||
RC0201FR-074K7L | YAGEO | 502 143 |
0.70 >1000 шт. 0.14 |
|||||
RC0201FR-074K7L | YAGEO | 11 034 | ||||||
RC0201FR-074K7L | 64 | 3.78 |
|