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Версия для печати
| Корпус | PG-SOT343-4 |
| Корпус (размер) | SC-82A, SOT-343 |
| Тип монтажа | Поверхностный |
| Current - Collector (Ic) (Max) | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 20mA, 4V |
| Power - Max | 160mW |
| Gain | 21dB |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1.8GHz |
| Frequency - Transition | 25GHz |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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BFP420 NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BFG520.215 |
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NPN-HF 15V 75mA 9GHz | NXP |
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GRM188R71C334KA01D |
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Murata Electronics North America |
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GRM188R71C334KA01D |
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MUR | 15 936 |
1.26 >100 шт. 0.63 |
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GRM188R71C334KA01D |
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GRM188R71C334KA01D |
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MURATA | 1 360 | 7.78 | ||
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GRM188R71C334KA01D |
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MURATA | 2 782 |
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| PVZ3A103C01R00 | MURATA |
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| PVZ3A103C01R00 |
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15.20 | ||||||
| PVZ3A103C01R00 | Murata Electronics North America |
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| PVZ3A103C01R00 | MUR |
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| PVZ3A103C01R00 | КИТАЙ |
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RLB0914-221KL |
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Индуктивность 220μH 0,7A 8,7x12mm | BOURNS | 5 156 | 25.61 | ||
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RLB0914-221KL |
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Индуктивность 220μH 0,7A 8,7x12mm |
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54.00 | |||
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ZVN4306A |
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N-channel enhancement mode vertical dmos fet | ZETEX |
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ZVN4306A |
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N-channel enhancement mode vertical dmos fet | 2 138 | 36.80 | ||
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ZVN4306A |
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N-channel enhancement mode vertical dmos fet | Diodes/Zetex |
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ZVN4306A |
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N-channel enhancement mode vertical dmos fet | ZETEX |
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ZVN4306A |
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N-channel enhancement mode vertical dmos fet | 2 138 | 36.80 |