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Транзистор полевой N-канальный MOSFET |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | STripFET™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 40A, 10V |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 160nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3700pF @ 25V |
| Power - Max | 300W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
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STP75NF75 (MOSFET) N-channel 75V - 0.0095? - 80A - TO-220 STripFET™ II Power MOSFET
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W | FUJI ELECTRIC | 80 | 253.76 | |
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W | FUJITSU |
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W | 1 | 277.50 | ||
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W | FUJ |
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W | FUJI |
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W | КИТАЙ |
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W | ISCSEMI |
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W | INCHANGE | 56 | 178.42 | |
| 2Г401ВГЕН.ШУМА |
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| 2Г401ВГЕН.ШУМА | НОВОСИБИРСКИЙ ЗПП |
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| FT232RL-REEL | FUTURE TECH DEVICES INTER |
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| FT232RL-REEL | FTDI, Future Technology Devices International Ltd |
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| FT232RL-REEL | FTDI | 4 525 | 364.06 | |||||
| FT232RL-REEL | FUTURE TECH DEVICES INTER LTD | 27 556 |
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| FT232RL-REEL | 1 128 | 439.90 | ||||||
| FT232RL-REEL | 1 |
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| FT232RL-REEL | 4-7 НЕДЕЛЬ | 630 |
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| FT232RL-REEL | 359 |
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| FT232RL-REEL | 357 |
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| SF28 (2A 600В) |
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| КП727Б | 10 | 55.20 |