| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Бит | 16 |
| Частота амплитудно-импульсной модуляции | 470 |
| Интерфейс подключения | DSP, MICROWIRE™, QSPI™, Serial, SPI™ |
| Число преобразователей | 1 |
| Мощность рассеивания (макс.) | 2.5mW |
| Напряжение питания источника | Analog and Digital |
| Рабочая температура | -40°C ~ 105°C |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 24-TSSOP (0.173", 4.40mm Width) |
| Корпус | 24-TSSOP |
| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
 |
 |
BAV99W |
|
(SMD) PBF SOT323
|
NXP
|
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
PHILIPS
|
25
|
1.67
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
|
127 916
|
1.92
>100 шт. 0.96
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
DC COMPONENTS
|
25 872
|
2.26
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
NXP
|
4 241
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
PHILIPS
|
5 020
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
INFINEON TECH
|
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
NEXPERIA
|
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
DIOTEC
|
2 986
|
1.25
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
|
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
PHI
|
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
HOTTECH
|
28 770
|
1.15
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
PANJIT
|
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
SEMTECH
|
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
SUNTAN
|
12
|
2.44
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
KLS
|
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
1
|
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
JSCJ
|
24 260
|
1.82
>100 шт. 0.91
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
XSEMI
|
8 280
|
1.64
|
|
|
|
|
DS1070-2 MVV6 |
|
|
CONNFLY
|
|
|
|
|
|
|
MMBTA92LT1G |
|
Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
|
ON SEMICONDUCTOR
|
12
|
2.24
|
|
|
|
|
MMBTA92LT1G |
|
Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
|
ONS
|
62 599
|
4.72
|
|
|
|
|
MMBTA92LT1G |
|
Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
|
|
|
7.20
|
|
|
|
|
MMBTA92LT1G |
|
Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
|
ON SEMICONDUCTOR
|
1 003
|
|
|
|
|
|
MMBTA92LT1G |
|
Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
|
GALAXY
|
|
|
|
|
|
|
MMBTA92LT1G |
|
Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
|
ON SEMICONDUCTO
|
|
|
|
|
|
|
MMBTA92LT1G |
|
Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
|
ONSEMICONDUCTOR
|
|
|
|
|
|
|
MMBTA92LT1G |
|
Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
|
0.00
|
|
|
|
|
|
|
SN75176ADR |
|
|
TEXAS INSTRUMENTS
|
108
|
|
|
|
|
|
SN75176ADR |
|
|
TEXAS
|
146
|
64.69
|
|
|
|
|
ST1S10PUR |
|
|
|
3 472
|
68.48
|
|
|
|
|
ST1S10PUR |
|
|
ST MICROELECTRONICS
|
3 892
|
73.33
|
|
|
|
|
ST1S10PUR |
|
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
|
ST1S10PUR |
|
|
STMicroelectronics
|
|
|
|
|
|
|
ST1S10PUR |
|
|
КИТАЙ
|
|
|
|
|
|
|
ST1S10PUR |
|
|
STMICROELECTR
|
|
|
|
|
|
|
ST1S10PUR |
|
|
4-7 НЕДЕЛЬ
|
124
|
|
|
Версия для печати
