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Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 2.2A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 1.9A |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) @ Vgs | 5.9nC @ 5V |
Input Capacitance (Ciss) @ Vds | 235pF @ 10V |
Power - Max | 460mW |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | 3-SSOT |
Product Change Notification | Mold Compound Change 07/Dec/2007 Mold Compound Change 08/April/2008 |
FDN357N (MOSFET) N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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HCNR200-300E |
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Avago Technologies US Inc |
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HCNR200-300E |
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AVAGO |
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HCNR200-300E |
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AGILENT TECHNOLOGIES |
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HCNR200-300E |
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AVAGO TECHNOLOGIES |
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HCNR200-300E |
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HCNR200-300E |
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BRO/AVAG |
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HCNR200-300E |
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BROADCOM |
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HCNR201-500E |
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Avago Technologies US Inc |
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HCNR201-500E |
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AVAGO TECHNOLOGIES |
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HCNR201-500E |
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AVAGO |
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HCNR201-500E |
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70 | 206.19 | |||
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HCNR201-500E |
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BRO/AVAG |
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HCNR201-500E |
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BROADCOM/AVAGO |
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HCNR201-500E |
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BROADCOM | 776 | 198.85 | ||
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HCNR201-500E |
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AVAGO/BROADCOM | 3 600 | 185.98 | ||
LM158DT | ST MICROELECTRONICS | 81 | 86.83 | |||||
LM158DT | STMicroelectronics |
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LM158DT |
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LM158DT | МАРОККО |
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LM158DT | КИТАЙ |
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LM158DT | STMICROELECTR |
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LM158DT | 4-7 НЕДЕЛЬ | 335 |
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MAX14626ETT+ | MAX |
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PBS9-G | HSUAN MAO |
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Корзина
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