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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 15A, 10V |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 36A |
Vgs(th) (Max) @ Id | 2.55V @ 250µA |
Gate Charge (Qg) @ Vgs | 7.2nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 550pF @ 10V |
Power - Max | 35W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | D2PAK |
IRL3714ZS (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1SMB5929BT3G |
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Стабилитрон 3W 15V DO214AA | ON SEMICONDUCTOR |
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1SMB5929BT3G |
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Стабилитрон 3W 15V DO214AA |
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35.68 | ||||
1SMB5929BT3G |
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Стабилитрон 3W 15V DO214AA | ON SEMICONDUCTOR | 120 |
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1SMB5929BT3G |
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Стабилитрон 3W 15V DO214AA | ONS | 2 848 | 17.71 | |||
1SMB5929BT3G |
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Стабилитрон 3W 15V DO214AA | ONSEMI |
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EGL41B | GENERAL SEMICONDUCTOR |
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EGL41B | GENERAL SEMICONDUCTOR | 1 184 |
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EGL41D | GENERAL SEMICONDUCTOR |
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EGL41D | GENERAL SEMICONDUCTOR |
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REF02CP |
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ИМС ИОН 5В | ANALOG DEVICES |
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REF02CP |
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ИМС ИОН 5В |
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210.28 | |||
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REF02CP |
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ИМС ИОН 5В | ANALOG DEVICES | 2 |
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REF02CP |
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ИМС ИОН 5В | Analog Devices Inc |
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REF02CP |
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ИМС ИОН 5В | 4-7 НЕДЕЛЬ | 538 |
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TLV2548IDW | TEXAS INSTRUMENTS |
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TLV2548IDW |
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1 655.48 | ||||||
TLV2548IDW | TEXAS |
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TLV2548IDW | 4-7 НЕДЕЛЬ | 489 |
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Корзина
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