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Версия для печати
| Current - Continuous Drain (Id) @ 25° C | 2.4A |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.6A, 4.5V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 8.8nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 210pF @ 15V |
| Power - Max | 1.7W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | Micro6™(TSOP-6) |
| Корпус | Micro6™(TSOP-6) |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 6.00 MHZ HC-49SM | ТАЙВАНЬ(КИТАЙ) |
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CRCW0805100RFKEA |
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Чип-резистор 100Ом, 1%, 0805 | VISHAY |
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CRCW0805100RFKEA |
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Чип-резистор 100Ом, 1%, 0805 | VISHAY | 18 477 |
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CRCW0805100RFKEA |
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Чип-резистор 100Ом, 1%, 0805 | Vishay/Dale |
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CRCW0805100RFKEA |
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Чип-резистор 100Ом, 1%, 0805 |
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| FM25W256-G | RAMTRON |
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| FM25W256-G |
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| FM25W256-G | CYPR |
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| FM25W256-G | CYP |
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| FM25W256-G | 4-7 НЕДЕЛЬ | 57 |
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| PESD2CAN | 11 840 | 4.13 | ||||||
| PESD2CAN | NXP |
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| PESD2CAN | NXP |
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| PESD2CAN | TECH PUB | 10 876 | 2.60 | |||||
| PESD2CAN | YOUTAI | 16 364 | 3.37 | |||||
| RC1206JR-0775R | YAGEO |
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