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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2512-27K 5% |
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ЧИП — резистор
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593
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2.80
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2512-620 5% |
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ЧИП — резистор
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2.80
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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12.49
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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14 328
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3.62
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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2 718
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4.21
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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21 448
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1.07
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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336
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1.42
>100 шт. 0.71
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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9 576
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1.17
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ASEMI
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4 280
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1.08
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEEN SIDE
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4 443
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1.76
>100 шт. 0.88
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MERRYELC
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2 056
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1.31
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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3 364
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13.13
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRONICS
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105
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16.80
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ON SEMICONDUCTOR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ON SEMICONDUCTOR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRONICS SEMI
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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STMICROELECTRONICS
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ИНДИЯ
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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PILIPINES
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST1
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRO
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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STMICROELECTR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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CHANGJIANG
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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KLS
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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HOTTECH
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877
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4.04
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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CHINA
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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JSCJ
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24 880
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6.14
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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1
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ИМОРТ
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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NXP
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376
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3.00
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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ST MICROELECTRONICS
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80
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28.89
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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PHILIPS
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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1 284
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8.23
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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STMICROELECTRONICS
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|
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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MCC
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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ST MICROELECTRONICS SEMI
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|
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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ON Semiconductor
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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ST MICROELECTR
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|
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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ON SEMIC
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|
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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PHILIPS SEMIC
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|
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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ST1
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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ST MICROELECTRO
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|
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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МИНСК
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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NXP
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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MULTICOMP
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|
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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CJ
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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HOTTECH
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|
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
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TRR
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BD140 |
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Транзистор биполярный средней мощности PNP 80В, 1.5A, 12Вт, 50мГц
|
JSCJ
|
8 557
|
7.55
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