FQA8N100C
1000v n-channel mosfet
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | QFET™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 1.45 Ohm @ 4A, 10V |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 70nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3220pF @ 25V |
| Power - Max | 225W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-3PN |
| Корпус | TO-3PN |
| Product Change Notification | Design/Process Change Notification 26/June/2007 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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FQA8N100C (MOSFET) 1000V N-Channel MOSFET
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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FGH50N6S2D | FAIR |
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FGH50N6S2D |
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2 510.00 | |||||
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FGH50N6S2D | Fairchild Semiconductor |
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FGH50N6S2D | FAIRCHILD |
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FGH50N6S2D | ONS-FAIR |
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FGH50N6S2D | ONS |
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HGTG27N120BN |
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72A/1200В N- | FAIR |
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HGTG27N120BN |
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72A/1200В N- | INTERSIL |
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HGTG27N120BN |
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72A/1200В N- | FSC |
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HGTG27N120BN |
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72A/1200В N- |
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2 400.00 | ||
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HGTG27N120BN |
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72A/1200В N- | INTERSIL |
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HGTG27N120BN |
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72A/1200В N- | Fairchild Semiconductor |
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HGTG27N120BN |
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72A/1200В N- | ONS |
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ISL9R30120G2 | FAIR |
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ISL9R30120G2 | ITL/HAR |
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ISL9R30120G2 |
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1 320.00 | |||||
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ISL9R30120G2 | Fairchild Semiconductor |
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ISL9R30120G2 | FAIRCHILD |
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