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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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AP432VL-A |
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DIODES
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AP432VL-A |
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AP432VL-A |
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DC COMPONENTS
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AP432VL-A |
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DIODES INC.
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11 096
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AP432VL-A |
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Diodes Inc
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AP432VL-A |
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Diodes/Zetex
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AP432VL-A |
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4-7 НЕДЕЛЬ
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721
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP
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2 892
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1.68
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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85 584
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1.06
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ON SEMICONDUCTOR
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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GALAXY
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485
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2.06
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ONS
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP
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3 888
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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Diodes Inc
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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КИТАЙ
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DI
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DC COMPONENTS
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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INFINEON
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DIODES
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DIOTEC
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8 296
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2.30
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ONSEMICONDUCTOR
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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GALAXY ME
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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INFINEON
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102
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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LRC
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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HOTTECH
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9 219
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1.90
>100 шт. 0.95
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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PANJIT
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SEMTECH
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11
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2.73
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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WUXI XUYANG
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52
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1.39
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SEMICRON
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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KOME
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP/NEXPERIA
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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YANGJIE (YJ)
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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JSCJ
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55 244
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1.06
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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YJ
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195 546
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2.07
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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XXW
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46 975
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1.64
>100 шт. 0.82
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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CJ
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8 000
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1.76
>100 шт. 0.88
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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KEEN SIDE
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64
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2.00
>100 шт. 1.00
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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MERRYELC
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68
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1.08
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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HXY
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1 600
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1.50
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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3615
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LM3916N-1 |
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NATIONAL SEMICONDUCTOR
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LM3916N-1 |
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LM3916N-1 |
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NSC
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LM3916N-1 |
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TEXAS
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LM3916N-1 |
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4-7 НЕДЕЛЬ
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507
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LM4702CTA |
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NATIONAL SEMICONDUCTOR
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LM4702CTA |
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896.12
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LM4702CTA |
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4-7 НЕДЕЛЬ
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508
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КТ 3107 А |
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Транзистор кремниевый эпитаксиально-планарный структуры NPN усилительный 50В,100мА, ...
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RUS
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