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Версия для печати
| Gate Charge (Qg) @ Vgs | 59nC @ 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 12.3 mOhm @ 13.9A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | TrenchFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 1800pF @ 15V |
| Power - Max | 52W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® 1212-8 |
| Корпус | PowerPAK® 1212-8 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BLM18PG221SN1D |
|
6.00 | ||||||
| BLM18PG221SN1D | MURATA |
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| BLM18PG221SN1D | MUR | 60 953 |
1.38 >100 шт. 0.69 |
|||||
| BLM18PG221SN1D | Murata Electronics North America |
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| BLM18PG221SN1D | MURATA | 11 428 |
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| BLM18PG221SN1D | MURATA* |
|
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| BLM18PG221SN1D | 23200 |
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| NTR4003NT1G | ONS |
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| NTR4003NT1G | ON Semiconductor |
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| NTR4003NT1G | ON SEMICONDUCTOR |
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| NTR4003NT1G |
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| SIS478DN-T1-GE3 |
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SN74LVC1G08DCKR |
|
18.60 | |||||
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SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 2 276 | 7.23 | ||||
|
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SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 12 148 |
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SN74LVC1G08DCKR | TEXAS |
|
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|
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SN74LVC1G08DCKR | YOUTAI | 11 004 | 4.91 | ||||
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SN74LVC1G08DCKR | UMW | 4 720 | 4.13 | ||||
|
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SN74LVC1G08DCKR | UMW-YOUTAI |
|
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||||
|
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SN74LVC1G08DCKR | 4-7 НЕДЕЛЬ | 776 |
|
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| SN74LVC1G97DCKR | TEXAS INSTRUMENTS |
|
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|||||
| SN74LVC1G97DCKR |
|
39.20 | ||||||
| SN74LVC1G97DCKR | TEXAS INSTRUMENTS | 887 |
|
|||||
| SN74LVC1G97DCKR | TEXAS |
|
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|||||
| SN74LVC1G97DCKR | 4-7 НЕДЕЛЬ | 337 |
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