STP5NK80Z
Транзистор N-Канальный+Z-Dio 800V 4,3A 110W 2,4R
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | SuperMESH™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 2.4 Ohm @ 2.15A, 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 4.3A |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Gate Charge (Qg) @ Vgs | 45.5nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 910pF @ 25V |
| Power - Max | 110W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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STP5NK80Z (MOSFET) N-channel 800V - 1.9? - 4.3A - TO-220 Zener-protected SuperMESH™ Power MOSFET
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 58 012 | 1.02 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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FSC |
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MCC |
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1N4007 |
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DIC |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 324 931 | 1.48 | ||
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1N4007 |
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DIOTEC | 71 806 | 2.80 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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JGD |
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MING SHUN |
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MS |
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QUAN-HONG |
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XR |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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Fairchild Semiconductor |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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MICROSEMI CORP |
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ТАЙВАНЬ(КИТАЙ) |
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GD |
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JC |
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KINGTRONICS |
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YJ | 184 475 | 1.39 | ||
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DIODES INC. |
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MIG |
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MICRO COMMERCIAL COMPONENTS |
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MOTOROLA |
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YJ ELE-NIC CORP |
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RECTIFIER |
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EXTRA COM-NTS |
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GALAXY ELECTRICAL |
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GEMBIRD |
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ТОМИЛИНО |
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EXTRA |
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1N4007 |
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КИТАЙ | 879 | 5.47 | ||
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DIOTEC SEMICONDUCTOR |
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MD |
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2 128 | 3.70 | |||
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ONS-FAIR |
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ONS |
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ELZET |
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GALAXY ME |
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LGE | 27 | 1.54 | ||
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1N4007 |
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HOTTECH | 60 724 | 1.06 | ||
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1N4007 |
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KLS | 31 200 | 2.07 | ||
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1N4007 |
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YS | 2 311 | 1.38 | ||
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YANGJIE | 33 456 | 1.47 | ||
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YANGJIE (YJ) |
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MC |
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FAIRCHILD |
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WUXI XUYANG |
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KUU |
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CHINA |
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SUNRISETRON |
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UNKNOWN |
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BILIN |
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KEHE |
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1 |
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BL |
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SUNTAN | 40 062 | 1.18 | ||
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TWGMC | 28 087 |
1.47 >500 шт. 0.49 |
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CTK |
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JUXING | 85 | 1.65 | ||
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ASEMI | 1 |
1.46 >100 шт. 0.73 |
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1N4007 |
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YANGZHOU YANGJIE |
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1N4007 |
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KEEN SIDE | 365 522 |
1.12 >100 шт. 0.56 |
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1N4007 |
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MERRYELC | 212 786 | 1.56 | ||
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82582 |
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1N4007 |
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81682 |
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1N4007 |
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TRR | 542 640 |
1.36 >100 шт. 0.68 |
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1N4007 |
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71682 |
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UC3842BN |
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ШИМ контроллер (регулировка по току) 1А, 11.5....30В, 500кГц, DIP8 | ST MICROELECTRONICS | 120 | 53.88 | |
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UC3842BN |
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ШИМ контроллер (регулировка по току) 1А, 11.5....30В, 500кГц, DIP8 | UTC |
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UC3842BN |
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ШИМ контроллер (регулировка по току) 1А, 11.5....30В, 500кГц, DIP8 | 10 | 55.50 | ||
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UC3842BN |
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ШИМ контроллер (регулировка по току) 1А, 11.5....30В, 500кГц, DIP8 | STMicroelectronics |
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UC3842BN |
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ШИМ контроллер (регулировка по току) 1А, 11.5....30В, 500кГц, DIP8 | ON Semiconductor |
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UC3842BN |
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ШИМ контроллер (регулировка по току) 1А, 11.5....30В, 500кГц, DIP8 | КИТАЙ |
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UC3842BN |
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ШИМ контроллер (регулировка по току) 1А, 11.5....30В, 500кГц, DIP8 | ST MICROELECTRO |
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UC3842BN |
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ШИМ контроллер (регулировка по току) 1А, 11.5....30В, 500кГц, DIP8 | 1 |
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UC3842BN |
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ШИМ контроллер (регулировка по току) 1А, 11.5....30В, 500кГц, DIP8 | 4-7 НЕДЕЛЬ | 60 |
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Д245Б | 43 | 83.25 | |||||
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Д245Б | САРАНСК |
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Д245Б | П/П 2 |
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Д245Б | СЗТП | 31 | 238.14 | ||||
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Д245Б | САРАНСКИЙ З-Д ТОЧНЫХ ПРИБОРО |
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| ТРУБКА ТЕРМОУСАДОЧНАЯ D 4.8 ЖЁЛ. 0.5М |
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| ТРУБКА ТЕРМОУСАДОЧНАЯ D 4.8 ЖЁЛ. 0.5М | ГЕРМАНИЯ |
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