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Корпус | P-DIP-8 |
Корпус (размер) | 8-DIP (0.300", 7.62mm) |
Тип монтажа | Выводной |
Рабочая температура | -20°C ~ 85°C |
Ток выходной | 11mA |
Напряжение питания | 7.5 V ~ 15.5 V |
Сфера применения | Power Supply Controller |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
TDA 4605-3 Control IC for Switched-Mode Power Supplies using MOS-Transistor
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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100МКФ 63 (10X13)105°C |
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1N4007 |
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DC COMPONENTS | 26 128 | 1.50 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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PANJIT |
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FSC |
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MCC |
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DIC |
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FAIR |
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1N4007 |
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PHILIPS |
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MIC | 274 642 | 1.47 | ||
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DIOTEC | 112 849 | 2.75 | ||
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ON SEMICONDUCTOR |
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LD |
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JGD |
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MING SHUN |
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MS |
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QUAN-HONG |
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XR |
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GALAXY |
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COMPACT TECHNOLOGY |
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DC COMPONENTS |
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FAIRCHILD | 288 |
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GENERAL SEMICONDUCTOR | 1 |
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LITE ON OPTOELECTRONICS |
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MASTER INSTRUMENT CORPORATION |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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ON SEMICONDUCTOR |
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PANJIT | 307 692 |
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PHILIPS |
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TAIWAN SEMICONDUCTOR MANF. |
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YANGJIE SEMICONDUCT |
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Fairchild Semiconductor |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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MICROSEMI CORP |
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ТАЙВАНЬ(КИТАЙ) |
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GD |
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JC |
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KINGTRONICS |
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YJ | 215 624 | 1.28 | ||
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DIODES INC. |
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MIG |
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MICRO COMMERCIAL COMPONENTS |
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MOTOROLA |
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YJ ELE-NIC CORP |
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RECTIFIER |
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EXTRA COM-NTS |
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GALAXY ELECTRICAL |
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GEMBIRD |
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ТОМИЛИНО |
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EXTRA |
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КИТАЙ | 800 | 4.54 | ||
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DIOTEC SEMICONDUCTOR |
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MD |
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266 205 |
1.66 >100 шт. 0.83 |
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ONS-FAIR |
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ONS |
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ELZET |
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GALAXY ME |
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LGE | 44 081 | 1.03 | ||
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HOTTECH | 532 993 | 2.32 | ||
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KLS | 96 000 | 2.07 | ||
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YS |
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YANGJIE | 8 800 | 1.56 | ||
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YANGJIE (YJ) |
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MC |
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FAIRCHILD |
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WUXI XUYANG |
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KUU |
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CHINA | 14 461 | 1.09 | ||
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SUNRISETRON |
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UNKNOWN |
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BILIN |
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KEHE |
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1 |
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BL |
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SUNTAN | 90 328 | 1.85 | ||
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TWGMC | 55 780 |
1.38 >500 шт. 0.46 |
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CTK |
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JUXING | 112 | 1.89 | ||
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ASEMI | 35 464 | 1.07 | ||
47МКФ 350 (16X25)105°C |
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BUZ91A |
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Транзистор полевой | ST MICROELECTRONICS |
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BUZ91A |
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Транзистор полевой | INFINEON |
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BUZ91A |
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Транзистор полевой | SIEMENS |
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BUZ91A |
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Транзистор полевой | 2 | 264.60 | ||
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BUZ91A |
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Транзистор полевой | СИНГАПУР |
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BUZ91A |
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Транзистор полевой | 1 |
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КТ503А |
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Транзистор кремниевый меза-эпитаксиально-планарный структуры NPN усилительный | 3 152 | 15.12 | ||
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КТ503А |
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Транзистор кремниевый меза-эпитаксиально-планарный структуры NPN усилительный | КРЕМНИЙ | 515 | 12.47 | |
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КТ503А |
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Транзистор кремниевый меза-эпитаксиально-планарный структуры NPN усилительный | АЛЕКСАНДРОВ |
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КТ503А |
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Транзистор кремниевый меза-эпитаксиально-планарный структуры NPN усилительный | БРЯНСК |
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КТ503А |
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Транзистор кремниевый меза-эпитаксиально-планарный структуры NPN усилительный | МИНСК |
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КТ503А |
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Транзистор кремниевый меза-эпитаксиально-планарный структуры NPN усилительный | ЭЛЕКС |
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КТ503А |
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Транзистор кремниевый меза-эпитаксиально-планарный структуры NPN усилительный | ИНТЕГРАЛ |
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Корзина
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