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Версия для печати
| Серия | SuperMESH™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 1.35 Ohm @ 3.6A, 10V |
| Drain to Source Voltage (Vdss) | 950V |
| Current - Continuous Drain (Id) @ 25° C | 7.2A |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1031pF @ 100V |
| Power - Max | 150W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-247-3 |
| Корпус | TO-247-3 |
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STW7N95K3 (MOSFET) N-channel 950 V, 1.1 ?, 7.2 A, TO-247 Zener-protected SuperMESH3™ Power MOSFET
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| MMSZ20T1G | ONS |
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| MMSZ20T1G | ON Semiconductor |
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| MMSZ20T1G | ON SEMICONDUCTOR | 7 975 |
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| MMSZ20T1G |
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| MMSZ24T1G | ONS |
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| MMSZ24T1G | ON Semiconductor |
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| MMSZ24T1G | ON SEMICONDUCTOR | 369 |
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| MMSZ24T1G |
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| MMSZ24T1G | ONSEMI | 428 | 4.72 | |||||
| MMSZ5V6T1G |
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Стабилитрон (P=500mW, Vz=5.6V, Izt=5mA, 5%) | 67 | 15.60 | ||||
| MMSZ5V6T1G |
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Стабилитрон (P=500mW, Vz=5.6V, Izt=5mA, 5%) | ON SEMICONDUCTOR |
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| MMSZ5V6T1G |
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Стабилитрон (P=500mW, Vz=5.6V, Izt=5mA, 5%) | ON SEMICONDUCTOR | 13 345 |
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| MMSZ5V6T1G |
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Стабилитрон (P=500mW, Vz=5.6V, Izt=5mA, 5%) | ONS |
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| STTH810DI | ST MICROELECTRONICS |
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| STTH810DI | 4 | 302.40 | ||||||
| STTH810DI | STMicroelectronics |
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| STTH810DI | 1 |
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TL2844D |
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Texas Instruments |
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TL2844D |
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TEXAS INSTRUMENTS |
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TL2844D |
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TL2844D |
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4-7 НЕДЕЛЬ | 684 |
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