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Версия для печати
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 600mA |
| Transistor Type | PNP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Power - Max | 250mW |
| Frequency - Transition | 200MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | TO-236AB |
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PMBT4403 (Импульсные биполярные транзисторы) Pnp Switching Transistor
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 2SA812 | DC COMPONENTS |
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| 2SA812 | 12 | 20.16 | ||||||
| 2SA812 | 12 | 20.16 | ||||||
| NCP1402SN33T1G | ON SEMICONDUCTOR |
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| NCP1402SN33T1G |
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72.00 | ||||||
| NCP1402SN33T1G | ONS |
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| NCP1402SN33T1G | МАЛАЙЗИЯ |
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| NCP1402SN33T1G | ON SEMIC |
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| NCP1402SN33T1G | ONSEMICONDUCTOR |
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| NCP1402SN33T1G | ON SEMICONDUCTO |
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| NCP1402SN33T1G | 4-7 НЕДЕЛЬ | 618 |
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| NCP1406SNT1G | ONS |
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| NCP1406SNT1G | ON SEMICONDUCTOR |
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| NCP1406SNT1G | ON SEMICONDUCTOR |
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| NCP1406SNT1G |
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49.96 | ||||||
| NCP1406SNT1G | ONSEMICONDUCTOR |
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| NCP1406SNT1G | 4-7 НЕДЕЛЬ | 787 |
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| SM4007 (1A 1000V) |
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| TEA1530AT | NXP |
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| TEA1530AT |
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256.80 | ||||||
| TEA1530AT |
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256.80 | ||||||
| TEA1530AT | 4-7 НЕДЕЛЬ | 469 |
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