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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 185 mOhm @ 1.6A, 10V |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 2.6A |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) @ Vds | 420pF @ 25V |
Power - Max | 2.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | SOT-223 |
IRFL4315 150V Single N-channel HexFET Power MOSFET inA SOT-223 Package
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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249ЛП10Р |
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293D336X9016C2TE3 |
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Электролитический танталовый конденсатор 33 мкФ 16 В | SPRAGUE |
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293D336X9016C2TE3 |
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Электролитический танталовый конденсатор 33 мкФ 16 В | Vishay/Sprague |
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293D336X9016C2TE3 |
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Электролитический танталовый конденсатор 33 мкФ 16 В | VISHAY | 10 997 | 17.86 | |||
293D336X9016C2TE3 |
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Электролитический танталовый конденсатор 33 мкФ 16 В |
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MAX17602ASA+ | MAX | 78 | 402.49 | |||||
MAX17602ASA+ |
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MAX17602ASA+ | 4-7 НЕДЕЛЬ | 262 |
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RC2010FK-071RL | YAGEO | 36 916 | 4.94 | |||||
RC2010FK-071RL |
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SS12 | FAIR |
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SS12 | GENERAL SEMICONDUCTOR |
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SS12 | MICRO COMMERCIAL COMPONENTS |
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SS12 | WILLAS ELECTRONIC |
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SS12 | 11 200 |
1.76 >100 шт. 0.88 |
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SS12 | DC COMPONENTS | 6 520 | 3.03 | ||||
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SS12 | FAIRCHILD |
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SS12 | FAIRCHILD | 14 |
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SS12 | GENERAL SEMICONDUCTOR | 37 |
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SS12 | MICRO COMMERCIAL COMPONENTS |
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SS12 | OTHER |
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SS12 | WILLAS ELECTRONIC CORP |
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SS12 | Fairchild Semiconductor |
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SS12 | MIC | 561 | 1.21 | ||||
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SS12 | YJ | 45 929 | 2.19 | ||||
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SS12 | PANJIT |
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SS12 | ONS |
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SS12 | ONS-FAIR |
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SS12 | ONSEMICONDUCTOR |
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SS12 | YANGJIE |
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SS12 | YANGJIE (YJ) |
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SS12 | HOTTECH |
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Корзина
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