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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 37A, 10V |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 61A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 64nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1720pF @ 25V |
Power - Max | 91W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
IRFZ48Z (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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EFD20 N87 B66417-G-X187 | EPCOS |
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EFD20 N87 B66417-G-X187 |
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49.40 | ||||||
MCA9H2.5-470 | ACP |
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MCA9H2.5-470 |
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56.96 | ||||||
MCA9H2.5-500К | ACP |
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MCA9H2.5-500К |
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56.96 | ||||||
MCA9H2.5-50К | ACP |
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MCA9H2.5-50К |
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56.96 |
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Корзина
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