| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
 |
SN74LVTH125PW |
|
|
TEXAS INSTRUMENTS
|
|
|
|
|
|
|
SN74LVTH125PW |
|
|
ROCHESTER
|
|
|
|
|
|
|
SN74LVTH125PW |
|
|
TEXAS
|
|
|
|
|
|
|
SN74LVTH125PW |
|
|
|
|
|
|
|
|
|
SN74LVTH125PW |
|
|
|
|
|
|
|
|
|
SN74LVTH125PW |
|
|
4-7 НЕДЕЛЬ
|
798
|
|
|
|
|
|
SN74LVTH244ADB |
|
|
TEXAS INSTRUMENTS
|
|
|
|
|
|
|
SN75176BDG4 |
|
|
TEXAS INSTRUMENTS
|
|
|
|
|
|
|
SN75176BDG4 |
|
|
TEXAS INSTRUMENTS
|
4
|
|
|
|
|
|
SN75ALS160DW |
|
|
TEXAS INSTRUMENTS
|
|
|
|
|
|
|
SN75ALS160DW |
|
|
TEXAS
|
|
|
|
|
|
|
SN75ALS160DW |
|
|
|
|
|
|
|
|
|
SN75ALS195N |
|
Приёмник RS422-A, R4,t=22 ns, Icc=35mA
|
TEXAS INSTRUMENTS
|
|
|
|
|
|
|
SN75ALS195N |
|
Приёмник RS422-A, R4,t=22 ns, Icc=35mA
|
TEXAS INSTRUMENTS
|
|
|
|
|
|
|
SN75ALS195N |
|
Приёмник RS422-A, R4,t=22 ns, Icc=35mA
|
TEXAS
|
|
|
|
|
|
|
SN75ALS195N |
|
Приёмник RS422-A, R4,t=22 ns, Icc=35mA
|
|
|
|
|
|
|
|
SN75LVDT386DGG |
|
|
TEXAS INSTRUMENTS
|
|
|
|
|
|
|
SN75LVDT386DGG |
|
|
TEXAS INSTRUMENTS
|
73
|
|
|
 |
|
SPP07N60C3 |
|
Полевой транзистор 7.3A, 600В, 0.60Ом
|
INFINEON
|
|
|
|
|
|
|
SPP07N60C3 |
|
Полевой транзистор 7.3A, 600В, 0.60Ом
|
|
|
246.72
|
|
|
|
|
SPP07N60C3 |
|
Полевой транзистор 7.3A, 600В, 0.60Ом
|
Infineon Technologies
|
|
|
|
|
|
|
SPP07N60C3 |
|
Полевой транзистор 7.3A, 600В, 0.60Ом
|
INFINEON TECH
|
|
|
|
|
|
|
SPW21N50C3 |
|
|
INFINEON
|
|
|
|
|
|
|
SPW21N50C3 |
|
|
Infineon Technologies
|
|
|
|
|
|
|
SPW21N50C3 |
|
|
|
|
|
|
|
|
|
ST1S06PU12R |
|
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
ST1S06PU12R |
|
|
STMicroelectronics
|
|
|
|
|
|
|
ST1S06PU12R |
|
|
КИТАЙ
|
|
|
|
|
|
|
ST1S12GR |
|
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
ST1S12GR |
|
|
|
|
|
|
|
|
|
ST1S12GR |
|
|
STMicroelectronics
|
|
|
|
|
|
|
ST1S12GR |
|
|
ST MICROELECTRONICS SEMI
|
378
|
|
|
|
|
|
ST1S12GR |
|
|
4-7 НЕДЕЛЬ
|
688
|
|
|
|
|
|
ST715MR |
|
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
ST715MR |
|
|
STMicroelectronics
|
|
|
|
|
|
|
ST715MR |
|
|
|
|
|
|
|
|
|
ST715MR |
|
|
4-7 НЕДЕЛЬ
|
368
|
|
|
|
|
|
ST802RT1BFR |
|
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
ST802RT1BFR |
|
|
STMicroelectronics
|
|
|
|
|
|
|
ST802RT1BFR |
|
|
КИТАЙ
|
|
|
|
|
|
|
STB40NF10 |
|
N-channel 100v - 0.025? - 50a - d2pak low gate charge stripfet™ ii power mosfet
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
STB40NF10 |
|
N-channel 100v - 0.025? - 50a - d2pak low gate charge stripfet™ ii power mosfet
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
|
STGD7NB120S-1 |
|
N-канальный igbt-транзистор на 1200 в, 7 а семейства powermesh™
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
STGD7NB120S-1 |
|
N-канальный igbt-транзистор на 1200 в, 7 а семейства powermesh™
|
STMicroelectronics
|
|
|
|
|
|
|
STGP14NC60KD |
|
Igbt-транзистор на 600 в, 14 а с усиленной защитой от короткого замыкания
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
STGP14NC60KD |
|
Igbt-транзистор на 600 в, 14 а с усиленной защитой от короткого замыкания
|
STMicroelectronics
|
|
|
|
|
|
|
STGP14NC60KD |
|
Igbt-транзистор на 600 в, 14 а с усиленной защитой от короткого замыкания
|
|
|
|
|
|
|
|
STGP8NC60K |
|
N-канальный igbt-транзистор на 600 в, 8 а семейства powermesh™ с защитой от короткого ...
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
STGP8NC60K |
|
N-канальный igbt-транзистор на 600 в, 8 а семейства powermesh™ с защитой от короткого ...
|
STMicroelectronics
|
|
|
|
|
|
|
STGP8NC60KD |
|
Igbt-транзистор на 600 в, 8 а с усиленной защитой от короткого замыкания
|
ST MICROELECTRONICS
|
|
|
|
