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Корпус | PG-SOT343-4 |
Корпус (размер) | SC-82A, SOT-343 |
Тип монтажа | Поверхностный |
Current - Collector (Ic) (Max) | 35mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 20mA, 4V |
Power - Max | 160mW |
Gain | 21dB |
Noise Figure (dB Typ @ f) | 1.1dB @ 1.8GHz |
Frequency - Transition | 25GHz |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Transistor Type | NPN |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
BFP420 NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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3314G-1-100E |
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Bourns Inc |
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3314G-1-100E |
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BOURNS | 211 | 36.98 | ||
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3314G-1-100E |
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3314J-1-500E |
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Потенциометр 50 Ом | BOURNS | 553 | 39.96 | ||
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3314J-1-500E |
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Потенциометр 50 Ом | BOURNS |
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3314J-1-500E |
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Потенциометр 50 Ом | Bourns Inc |
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3314J-1-500E |
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Потенциометр 50 Ом |
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CECL-1200/96 122K |
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CECL-1200/96 122K | R6 |
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GRM188R71E104KA01D | MURATA | 28 732 | 2.07 | |||||
GRM188R71E104KA01D | MURATA | 16 000 |
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GRM188R71E104KA01D | Murata Electronics North America |
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GRM188R71E104KA01D |
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GRM188R71E104KA01D | MUR | 1 |
1.35 >500 шт. 0.45 |
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HEF4511BT,652 |
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NXP Semiconductors |
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HEF4511BT,652 |
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NXP |
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HEF4511BT,652 |
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NEX |
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Корзина
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