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Версия для печати
| Корпус | PG-SOT343-4 |
| Корпус (размер) | SC-82A, SOT-343 |
| Тип монтажа | Поверхностный |
| Current - Collector (Ic) (Max) | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 20mA, 4V |
| Power - Max | 160mW |
| Gain | 21dB |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1.8GHz |
| Frequency - Transition | 25GHz |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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BFP420 NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 3313J-1-203E | BOURNS | 144 | 165.31 | |||||
| 3313J-1-203E | Bourns Inc |
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| 3313J-1-203E |
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| 3313J-1-203E | BOURNS SENSORS |
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3362P-1-201LF |
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Bourns Inc |
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3362P-1-201LF |
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BOURNS |
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3362P-1-201LF |
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6 |
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| BFG67.215 | NXP |
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| BFG67.215 |
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CM322522-470KL |
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ЧИП индуктивность 47мкГн, 1210, 7Ом, 10%, 15МГц | BOURNS |
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CM322522-470KL |
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ЧИП индуктивность 47мкГн, 1210, 7Ом, 10%, 15МГц |
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GRM1885C2A101JA01D |
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Murata Electronics North America |
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GRM1885C2A101JA01D |
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MURATA | 1 467 |
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GRM1885C2A101JA01D |
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MUR | 53 657 |
1.06 >100 шт. 0.53 |
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GRM1885C2A101JA01D |
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GRM1885C2A101JA01D |
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MURATA |
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