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Версия для печати
| Gate Charge (Qg) @ Vgs | 3.9nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2.5V @ 25µA |
| Current - Continuous Drain (Id) @ 25° C | 3.6A |
| Drain to Source Voltage (Vdss) | 40V |
| Rds On (Max) @ Id, Vgs | 56 mOhm @ 3.6A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 266pF @ 25V |
| Power - Max | 1.3W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | Micro3™/SOT-23 |