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Версия для печати
| Gate Charge (Qg) @ Vgs | 3.9nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2.5V @ 25µA |
| Current - Continuous Drain (Id) @ 25° C | 3.6A |
| Drain to Source Voltage (Vdss) | 40V |
| Rds On (Max) @ Id, Vgs | 56 mOhm @ 3.6A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 266pF @ 25V |
| Power - Max | 1.3W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | Micro3™/SOT-23 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| CRCW060310K0FKEA | VISHAY |
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| CRCW060310K0FKEA | VISHAY | 2 193 |
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| CRCW060310K0FKEA | Vishay/Dale |
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| CRCW060310K0FKEA |
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| CRCW060310K0FKEA | VIS |
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| ETC4-1-2TR |
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102.00 | ||||||
| ETC4-1-2TR |
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102.00 | ||||||
| ETC4-1-2TR | M/A |
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| ETC4-1-2TR | MACOM |
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| LIS3DHTR | 6 576 | 36.35 | ||||||
| LIS3DHTR | STMicroelectronics |
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| LIS3DHTR | ST MICROELECTRONICS SEMI |
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| LIS3DHTR | ST MICROELECTRONICS | 37 205 | 30.29 | |||||
| LIS3DHTR | STMICROELECTR |
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| LIS3DHTR | 4-7 НЕДЕЛЬ | 616 |
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| PIC12F1822-I/SN | MICRO CHIP | 432 | 134.32 | |||||
| PIC12F1822-I/SN | Microchip Technology |
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| PIC12F1822-I/SN | MICRO CHIP | 2 532 |
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| PIC12F1822-I/SN | ТАИЛАНД |
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| PIC12F1822-I/SN | 1 104 | 79.28 | ||||||
| PIC12F1822-I/SN | 4-7 НЕДЕЛЬ | 694 |
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| RC0603JR-07120KL | YAGEO | 173 878 |
0.60 >1000 шт. 0.12 |
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| RC0603JR-07120KL | YAGEO |
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| RC0603JR-07120KL |
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