PBSS4350T,215
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TRANS NPN 50V 2A SOT23 |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 300mA, 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A, 2V |
| Power - Max | 540mW |
| Frequency - Transition | 100MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | TO-236AB |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
|
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| B82477G4224M | EPCOS | 2 650 | 132.71 | |||||
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| B82477G4224M | TDK EPCOS |
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ECASD40J107M015K00 |
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Murata Electronics North America |
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ECASD40J107M015K00 |
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MUR |
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ECASD40J107M015K00 |
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ECASD40J107M015K00 |
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MURATA | 1 143 | 55.32 | ||
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IRLR3110Z | INTERNATIONAL RECTIFIER |
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IRLR3110Z |
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326.40 | |||||
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IRLR3110Z | INFINEON |
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IRLR3110Z | VBSEMI |
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| MBR120VLSFT1G | ON SEMICONDUCTOR |
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| MBR120VLSFT1G | ON SEMICONDUCTOR |
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| MBR120VLSFT1G | ONS |
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| MBR120VLSFT1G |
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| PBSS5350T.215 | NXP |
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| PBSS5350T.215 | NEX-NXP |
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| PBSS5350T.215 |
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| PBSS5350T.215 | JSMICRO | 61 549 | 3.40 |
