|
Версия для печати
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Drain to Source Voltage (Vdss) | 55V |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 11A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) @ Vgs | 15nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 480pF @ 25V |
| Power - Max | 45W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| DO5022P-102MLD | COILCRAFT |
|
|
|||||
| DO5022P-102MLD | COILCRAFT |
|
|
|||||
| DO5022P-102MLD |
|
|
||||||
| LC01-6 | SEMTECH |
|
|
|||||
| LC01-6 | SEMTECH |
|
|
|||||
| LQH32CN4R7M33L 4.7МКГН 20% 1210 ЧИП ИНДУКТИВНОСТЬ | MURATA | 259 | 6.30 | |||||
| LQH32CN4R7M33L 4.7МКГН 20% 1210 ЧИП ИНДУКТИВНОСТЬ | 324 |
|
|
|||||
|
|
|
PM3316-1R5M-RC |
|
JW Miller A Bourns Company |
|
|
||
|
|
|
PM3316-1R5M-RC |
|
|
|
|||
| SRDA3.3-4 | SEMTECH |
|
|
|||||
| SRDA3.3-4 |
|
|
||||||
| SRDA3.3-4 | SEMTECH |
|
|