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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 33A, 10V |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 85A |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4460pF @ 50V |
| Power - Max | 350W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
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IRFB4321PBF (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 1N4448W |
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Si-Diode 75V 150mA | DIOTEC |
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| 1N4448W |
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Si-Diode 75V 150mA | DC COMPONENTS | 15 134 |
1.90 >100 шт. 0.95 |
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| 1N4448W |
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Si-Diode 75V 150mA | 85 120 |
1.84 >100 шт. 0.92 |
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| 1N4448W |
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Si-Diode 75V 150mA | JSCJ | 107 129 |
1.06 >100 шт. 0.53 |
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| B66397-G-X187, N87, ETD59 (1 ШТ.) | EPCOS |
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| SM712 | SEM |
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| SM712 | SMTC |
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| SM712 | ANBON | 383 | 9.94 | |||||
| SM712 | 9 600 | 3.50 | ||||||
| SM712 | FUXIN | 4 760 | 2.58 | |||||
| SM712 | MDD | 4 949 | 2.60 | |||||
| SM712 | DOWO | 3 073 | 2.41 | |||||
| SM712 | TECH PUB | 132 999 | 4.05 | |||||
| SM712 | HOTTECH | 11 871 | 4.69 | |||||
| SM712 | YJ | 24 216 | 11.45 | |||||
| SM712 | MSKSEMI | 3 447 | 3.00 | |||||
| SM712 | SUNTAN | 502 | 3.75 | |||||
| SM712 | XSEMI | 9 525 | 2.72 | |||||
| SM712 | YANGZHOU YANGJIE |
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| SM712 | KEEN SIDE | 1 304 | 1.90 | |||||
| SM712 | 4309 |
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| SM712 | 7478 |
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| SM712 | TRR | 7 200 | 2.32 | |||||
| К78-2, 0.01 МКФ, 1600 В, 10% | ПОЛИКОНД |
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| К78-2, 0.01 МКФ, 1600 В, 10% |
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| СР50-135ФВ |
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