SIS412DN-T1-GE3
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 7.8A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 435pF @ 15V |
| Power - Max | 15.6W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® 1212-8 |
| Корпус | PowerPAK® 1212-8 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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ADCMP605BCPZ-WP |
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Analog Devices Inc |
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ADCMP605BCPZ-WP |
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ANALOG |
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ADCMP605BCPZ-WP |
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ADCMP605BCPZ-WP |
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4-7 НЕДЕЛЬ | 134 |
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| BLM15HG102SN1D | MUR | 239 995 |
1.50 >500 шт. 0.50 |
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| BLM15HG102SN1D | MURATA | 2 000 | 2.08 | |||||
| BLM15HG102SN1D | MURATA | 17 133 |
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| BLM15HG102SN1D | 40 | 54.44 | ||||||
| BLM15HG102SN1D | Murata Electronics North America |
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| BLM15HG102SN1D | MURATA* |
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| BLM15HG102SN1D | 0.00 |
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| DHN-04F-V | DPT |
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| DHN-04F-V | DIP | 540 | 59.95 | |||||
| DHN-04F-V |
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| LAN8742AI-CZ | MICRO CHIP |
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| LAN8742AI-CZ | 23 | 207.46 | ||||||
| LAN8742AI-CZ | 4-7 НЕДЕЛЬ | 380 |
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| NFM18PS105R0J3D | MURATA | 107 | 5.17 | |||||
| NFM18PS105R0J3D | MURATA |
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| NFM18PS105R0J3D | Murata Electronics North America |
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| NFM18PS105R0J3D | MUR | 13 768 | 3.14 | |||||
| NFM18PS105R0J3D |
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