5 W 0.33 OHM
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Версия для печати
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 48 963 |
1.96 >100 шт. 0.98 |
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 455 769 | 1.47 | ||
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1N4007 |
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DIOTEC | 77 412 | 3.06 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 200 187 |
1.86 >100 шт. 0.93 |
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 4.54 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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188 205 |
1.66 >100 шт. 0.83 |
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 22 451 | 1.03 | ||
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1N4007 |
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HOTTECH | 135 112 | 1.23 | ||
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1N4007 |
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KLS | 52 000 | 2.07 | ||
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1N4007 |
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YS | 2 330 | 1.36 | ||
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1N4007 |
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YANGJIE | 800 | 1.58 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU |
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1N4007 |
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CHINA | 14 461 | 1.09 | ||
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 65 408 | 1.97 | ||
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1N4007 |
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TWGMC | 23 624 |
1.05 >500 шт. 0.35 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 93 | 1.57 | ||
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1N4007 |
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ASEMI | 1 031 | 1.13 | ||
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1N4007 |
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YANGZHOU YANGJIE |
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| 2N5401G | ON SEMICONDUCTOR |
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| 2N5401G |
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10.00 | ||||||
| 2N5401G | ONS |
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| 2N5401G | ON SEMICONDUCTOR |
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|||||
| LG200M1000BPF-3040 |
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Электролитический алюминиевый конденсатор 1000 мкФ 200 В | YAGEO |
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| LG200M1000BPF-3040 |
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Электролитический алюминиевый конденсатор 1000 мкФ 200 В | ТАЙВАНЬ (КИТАЙ) |
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| LG200M1000BPF-3040 |
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Электролитический алюминиевый конденсатор 1000 мкФ 200 В | ТАЙВАНЬ(КИТАЙ) |
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|||
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A | ON SEMICONDUCTOR | 8 | 177.66 | |
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A |
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65.76 | ||
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A | ON SEMICONDUCTOR |
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A | ISC | 488 | 35.63 | |
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ON SEMICONDUCTOR |
|
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MJE15033 |
|
Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) |
|
74.04 | |||
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MJE15033 |
|
Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ISC | 452 | 35.63 |
