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Версия для печати
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 86 834 | 1.59 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 303 432 | 1.47 | ||
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1N4007 |
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DIOTEC | 71 820 | 2.84 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 347 932 | 1.30 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 816 | 5.47 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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1 916 | 3.70 | |||
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 739 | 1.03 | ||
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1N4007 |
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HOTTECH | 134 296 |
2.00 >100 шт. 1.00 |
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1N4007 |
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KLS | 216 | 2.07 | ||
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1N4007 |
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YS | 2 311 | 1.36 | ||
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1N4007 |
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YANGJIE | 72 992 | 1.49 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU | 4 |
1.02 >500 шт. 0.34 |
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1N4007 |
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CHINA |
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 50 301 | 1.23 | ||
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1N4007 |
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TWGMC | 32 653 |
1.14 >500 шт. 0.38 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 85 | 2.34 | ||
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1N4007 |
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ASEMI | 1 |
1.54 >100 шт. 0.77 |
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1N4007 |
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YANGZHOU YANGJIE |
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1N4007 |
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KEEN SIDE | 82 |
1.18 >100 шт. 0.59 |
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| 2N5401G | ON SEMICONDUCTOR |
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| 2N5401G |
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10.00 | ||||||
| 2N5401G | ONS |
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| 2N5401G | ON SEMICONDUCTOR |
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| LG200M1000BPF-3040 |
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Электролитический алюминиевый конденсатор 1000 мкФ 200 В | YAGEO |
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| LG200M1000BPF-3040 |
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Электролитический алюминиевый конденсатор 1000 мкФ 200 В | ТАЙВАНЬ (КИТАЙ) |
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| LG200M1000BPF-3040 |
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Электролитический алюминиевый конденсатор 1000 мкФ 200 В | ТАЙВАНЬ(КИТАЙ) |
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A | ON SEMICONDUCTOR | 8 | 195.20 | |
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A |
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65.76 | ||
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A | ON SEMICONDUCTOR |
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A | ISC | 392 | 34.96 | |
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ON SEMICONDUCTOR |
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) |
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74.04 | |||
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ISC | 407 | 34.96 |