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Gate Charge (Qg) @ Vgs | 2.5nC @ 4.5V |
Vgs(th) (Max) @ Id | 2.5V @ 25µA |
Current - Continuous Drain (Id) @ 25° C | 2.7A |
Drain to Source Voltage (Vdss) | 60V |
Rds On (Max) @ Id, Vgs | 92 mOhm @ 2.7A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) @ Vds | 290pF @ 25V |
Power - Max | 1.25W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | Micro3™/SOT-23 |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
293D476X96R3B2TE3 | VISHAY | 6 588 | 16.34 | |||||
293D476X96R3B2TE3 | Vishay/Sprague |
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293D476X96R3B2TE3 | VISHAY |
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293D476X96R3B2TE3 |
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ADA4896-2ARMZ |
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ADA4896-2ARMZ | ANALOG DEVICES |
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ADA4896-2ARMZ | ANALOG |
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ADA4896-2ARMZ | 4-7 НЕДЕЛЬ | 685 |
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FH-311 |
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FH-311 | DRAGON CITY |
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FH-311 | TWN |
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RC0402JR-07200RL |
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RES 200 OHM 1/16W 5% 0402 ( ±100ppm/°C) | YAGEO | 1 559 443 |
0.40 >1000 шт. 0.08 |
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RC0402JR-07200RL |
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RES 200 OHM 1/16W 5% 0402 ( ±100ppm/°C) | YAGEO | 30 768 |
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RC0402JR-07200RL |
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RES 200 OHM 1/16W 5% 0402 ( ±100ppm/°C) |
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SLF12565T-470M2R4-PF | TDK | 2 012 | 33.11 | |||||
SLF12565T-470M2R4-PF | КИТАЙ |
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SLF12565T-470M2R4-PF |
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Корзина
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