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Версия для печати
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Drain to Source Voltage (Vdss) | 55V |
| Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 75A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4780pF @ 25V |
| Power - Max | 230W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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BZX55-C6V2 | GENERAL SEMICONDUCTOR |
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BZX55-C6V2 | DC COMPONENTS | 12 215 |
1.92 >100 шт. 0.96 |
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BZX55-C6V2 | VISHAY |
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BZX55-C6V2 |
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BZX55-C6V2 | GENERAL SEMICONDUCTOR |
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BZX55-C6V2 | KEEN SIDE | 12 856 |
1.16 >100 шт. 0.58 |
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| DE1E3KX222MA4BN01F | MUR | 79 889 | 3.97 | |||||
| DE1E3KX222MA4BN01F |
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| DE1E3KX222MA4BN01F | MURATA | 952 | 10.72 | |||||
| DE1E3KX222MA4BN01F | MURATA |
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| DE1E3KX222MA4BN01F | MURATA* |
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| DE1E3KX222MA4BN01F | 0.00 |
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| GRM31MR71H105KA88K |
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Керамический конденсатор 1 мкФ 50 В | MUR |
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| GRM31MR71H105KA88K |
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Керамический конденсатор 1 мкФ 50 В | Murata Electronics North America |
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| HIP4081AIBZ | INTERSIL |
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| HIP4081AIBZ |
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712.00 | ||||||
| HIP4081AIBZ | RENESAS |
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| HIP4081AIBZ | 4-7 НЕДЕЛЬ | 656 |
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RC1206JR-07120K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 120 К | VITRAMON |
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RC1206JR-07120K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 120 К | VITROHM |
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RC1206JR-07120K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 120 К | VITROHM |
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RC1206JR-07120K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 120 К | YAGEO |
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RC1206JR-07120K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 120 К | YAGEO | 94 814 |
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