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Версия для печати
| Производитель | NXP |
| Количество в упаковке | 1000 шт. |
| Вес | 0.033 г |
| Attachment Method | 600 В |
| Cavity D | 1 А |
| Conductor Diameter | 1.2 В |
| Conductor Insulation | 5 мА |
| Время включения | 2 мкс |
| Корпус | SOT223 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BAS16H,115 | NXP |
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| BAS16H,115 | NXP Semiconductors |
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| BAS16H,115 | NEX |
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| BAS16H,115 |
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| BAS16H,115 | NEX-NXP |
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| FYLS-0603BUGC | FORYARD | 36 810 | 3.54 | |||||
| FYLS-0603BUGC |
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| MMSZ5231B | FAIR |
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| MMSZ5231B | FAIRCHILD |
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| MMSZ5231B | FAIRCHILD |
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| MMSZ5231B | Fairchild Semiconductor |
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| MMSZ5231B | YJ | 536 927 |
1.62 >100 шт. 0.81 |
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| MMSZ5231B | YT |
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| MMSZ5231B | 42 960 |
1.66 >100 шт. 0.83 |
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| MMSZ5231B | DIOTEC | 3 340 | 1.23 | |||||
| MMSZ5231B | ONS |
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| MMSZ5231B | YANGJIE |
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| MMSZ5231B | YANGJIE (YJ) |
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| MMSZ5231B | YANGZHOU YANGJIE |
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| MMSZ5231B | KEEN SIDE | 3 956 |
1.50 >100 шт. 0.75 |
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| MMSZ5231B | KLS | 24 000 |
1.96 >100 шт. 0.98 |
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| MMSZ5256BT1G | ON SEMICONDUCTOR |
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| MMSZ5256BT1G | ON SEMICONDUCTOR | 2 917 |
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| MMSZ5256BT1G | ONS |
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| MMSZ5256BT1G |
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| TKR4R7M2GG13M | JAMICON |
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| TKR4R7M2GG13M |
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