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Версия для печати
| Gate Charge (Qg) @ Vgs | 1nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2.3V @ 25µA |
| Current - Continuous Drain (Id) @ 25° C | 2.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.7A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 110pF @ 15V |
| Power - Max | 1.3W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | Micro3™/SOT-23 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 1206 110 КОМ 5% | 1 832 |
1.02 >100 шт. 0.51 |
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HCPL-0631-500E |
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Avago Technologies US Inc |
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||
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HCPL-0631-500E |
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984 | 162.67 | |||
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HCPL-0631-500E |
|
AVAGO TECHNOLOGIES | 257 |
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HCPL-0631-500E |
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AVAGO |
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HCPL-0631-500E |
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BROADCOM/AVAGO |
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HCPL-0631-500E |
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BROADCOM |
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HCPL-0631-500E |
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BRO/AVAG |
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HCPL-0631-500E |
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AVAGO/BROAD |
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HCPL-0631-500E |
|
4-7 НЕДЕЛЬ | 40 |
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|
HCPL-0631-500E |
|
AVAGO/BROADCOM | 616 | 196.31 | ||
| LM5022MM/NOPB | NSC |
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| LM5022MM/NOPB | NATIONAL SEMICONDUCTOR |
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| LM5022MM/NOPB | National Semiconductor |
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| LM5022MM/NOPB | TEXAS INSTRUMENTS |
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| LM5022MM/NOPB | TEXAS |
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| LM5022MM/NOPB | 7 | 216.68 | ||||||
| LMV321ILT | ST MICROELECTRONICS | 10 | 34.44 | |||||
| LMV321ILT | STMicroelectronics |
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| LMV321ILT |
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| LMV321ILT | ST MICROELECTRONICS SEMI | 228 |
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| LMV321ILT | TECH PUB | 6 751 | 5.42 | |||||
| LMV321ILT | 4-7 НЕДЕЛЬ | 208 |
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ZHR-2 |
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JST Sales America Inc |
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ZHR-2 |
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JST | 12 720 | 1.21 | ||
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ZHR-2 |
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31.72 |