T491A105K016AT
|
Версия для печати
| Высота | 0.071" (1.80mm) |
| Корпус (размер) | 1206 (3216 Metric) |
| Тип | Molded |
| Рабочая температура | -55°C ~ 125°C |
| Допустимые отклонения емкости | ±10% |
| Серия | T491 |
| ESR (Equivalent Series Resistance) | 10.00 Ohm |
| Возможности | General Purpose |
| Тип монтажа | Поверхностный |
| Номинальное напряжение | 16V |
| Тип | Электролитический танталовый |
| Manufacturer Size Code | A |
| Size / Dimension | 0.126" L x 0.063" W (3.20mm x 1.60mm) |
| Емкость | 1.0µF |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Tolerance | ±10% |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
 |
 |
1N4007 |
|
DC COMPONENTS | 60 996 | 1.94 | ||
|
|
|
1N4007 |
|
GENERAL SEMICONDUCTOR |
|
|
||
|
|
|
1N4007 |
|
LITE ON OPTOELECTRONICS |
|
|
||
|
|
|
1N4007 |
|
PANJIT |
|
|
||
|
|
|
1N4007 |
|
FSC |
|
|
||
|
|
|
1N4007 |
|
MCC |
|
|
||
|
|
|
1N4007 |
|
DIC |
|
|
||
|
|
|
1N4007 |
|
FAIR |
|
|
||
|
|
|
1N4007 |
|
PHILIPS |
|
|
||
|
|
|
1N4007 |
|
MIC | 330 087 | 1.48 | ||
|
|
|
1N4007 |
|
DIOTEC | 71 806 | 2.94 | ||
|
|
|
1N4007 |
|
ON SEMICONDUCTOR |
|
|
||
|
|
|
1N4007 |
|
LD |
|
|
||
|
|
|
1N4007 |
|
JGD |
|
|
||
|
|
|
1N4007 |
|
MING SHUN |
|
|
||
|
|
|
1N4007 |
|
MS |
|
|
||
|
|
|
1N4007 |
|
QUAN-HONG |
|
|
||
|
|
|
1N4007 |
|
XR |
|
|
||
|
|
|
1N4007 |
|
GALAXY |
|
|
||
|
|
|
1N4007 |
|
COMPACT TECHNOLOGY |
|
|
||
|
|
|
1N4007 |
|
DC COMPONENTS |
|
|
||
|
|
|
1N4007 |
|
FAIRCHILD | 288 |
|
||
|
|
|
1N4007 |
|
GENERAL SEMICONDUCTOR | 1 |
|
||
|
|
|
1N4007 |
|
LITE ON OPTOELECTRONICS |
|
|
||
|
|
|
1N4007 |
|
MASTER INSTRUMENT CORPORATION |
|
|
||
|
|
|
1N4007 |
|
MICRO SEMICONDUCTOR(MICROSEMI) |
|
|
||
|
|
|
1N4007 |
|
ON SEMICONDUCTOR |
|
|
||
|
|
|
1N4007 |
|
PANJIT | 307 692 |
|
||
|
|
|
1N4007 |
|
PHILIPS |
|
|
||
|
|
|
1N4007 |
|
TAIWAN SEMICONDUCTOR MANF. |
|
|
||
|
|
|
1N4007 |
|
YANGJIE SEMICONDUCT |
|
|
||
|
|
|
1N4007 |
|
Fairchild Semiconductor |
|
|
||
|
|
|
1N4007 |
|
SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
|
|
||
|
|
|
1N4007 |
|
MICROSEMI CORP |
|
|
||
|
|
|
1N4007 |
|
ТАЙВАНЬ(КИТАЙ) |
|
|
||
|
|
|
1N4007 |
|
GD |
|
|
||
|
|
|
1N4007 |
|
JC |
|
|
||
|
|
|
1N4007 |
|
KINGTRONICS |
|
|
||
|
|
|
1N4007 |
|
YJ | 200 292 | 1.43 | ||
|
|
|
1N4007 |
|
DIODES INC. |
|
|
||
|
|
|
1N4007 |
|
MIG |
|
|
||
|
|
|
1N4007 |
|
MICRO COMMERCIAL COMPONENTS |
|
|
||
|
|
|
1N4007 |
|
MOTOROLA |
|
|
||
|
|
|
1N4007 |
|
YJ ELE-NIC CORP |
|
|
||
|
|
|
1N4007 |
|
RECTIFIER |
|
|
||
|
|
|
1N4007 |
|
EXTRA COM-NTS |
|
|
||
|
|
|
1N4007 |
|
GALAXY ELECTRICAL |
|
|
||
|
|
|
1N4007 |
|
GEMBIRD |
|
|
||
|
|
|
1N4007 |
|
ТОМИЛИНО |
|
|
||
|
|
|
1N4007 |
|
EXTRA |
|
|
||
|
|
|
1N4007 |
|
КИТАЙ | 881 | 5.47 | ||
|
|
|
1N4007 |
|
DIOTEC SEMICONDUCTOR |
|
|
||
|
|
|
1N4007 |
|
MD |
|
|
||
|
|
|
1N4007 |
|
1 916 | 3.70 | |||
|
|
|
1N4007 |
|
ONS-FAIR |
|
|
||
|
|
|
1N4007 |
|
ONS |
|
|
||
|
|
|
1N4007 |
|
ELZET |
|
|
||
|
|
|
1N4007 |
|
GALAXY ME |
|
|
||
|
|
|
1N4007 |
|
LGE | 27 | 1.65 | ||
|
|
|
1N4007 |
|
HOTTECH | 8 479 | 1.48 | ||
|
|
|
1N4007 |
|
KLS |
|
|
||
|
|
|
1N4007 |
|
YS | 2 311 | 1.38 | ||
|
|
|
1N4007 |
|
YANGJIE | 49 464 | 1.52 | ||
|
|
|
1N4007 |
|
YANGJIE (YJ) |
|
|
||
|
|
|
1N4007 |
|
MC |
|
|
||
|
|
|
1N4007 |
|
FAIRCHILD |
|
|
||
|
|
|
1N4007 |
|
WUXI XUYANG |
|
|
||
|
|
|
1N4007 |
|
KUU |
|
|
||
|
|
|
1N4007 |
|
CHINA |
|
|
||
|
|
|
1N4007 |
|
SUNRISETRON |
|
|
||
|
|
|
1N4007 |
|
UNKNOWN |
|
|
||
|
|
|
1N4007 |
|
BILIN |
|
|
||
|
|
|
1N4007 |
|
KEHE |
|
|
||
|
|
|
1N4007 |
|
1 |
|
|
||
|
|
|
1N4007 |
|
BL |
|
|
||
|
|
|
1N4007 |
|
SUNTAN | 53 717 | 1.27 | ||
|
|
|
1N4007 |
|
TWGMC | 28 727 |
1.47 >500 шт. 0.49 |
||
|
|
|
1N4007 |
|
CTK |
|
|
||
|
|
|
1N4007 |
|
JUXING | 85 | 1.76 | ||
|
|
|
1N4007 |
|
ASEMI | 1 |
1.56 >100 шт. 0.78 |
||
|
|
|
1N4007 |
|
YANGZHOU YANGJIE |
|
|
||
|
|
|
1N4007 |
|
KEEN SIDE | 389 522 |
1.18 >100 шт. 0.59 |
||
|
|
|
1N4007 |
|
MERRYELC | 212 786 | 1.66 | ||
|
|
|
1N4007 |
|
82582 |
|
|
||
|
|
|
1N4007 |
|
81682 | 8 | 1.06 | ||
|
|
|
1N4007 |
|
TRR | 582 640 |
1.42 >100 шт. 0.71 |
||
 |
|
7805C(TO-220) |
|
Стабилизатор положительного напряжения |
|
|
||
| MMBT2222ALT1G |
|
Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C) | ON SEMICONDUCTOR |
|
|
|||
| MMBT2222ALT1G |
|
Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C) | ONS |
|
|
|||
| MMBT2222ALT1G |
|
Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C) | ON SEMICONDUCTOR | 4 821 |
|
|||
| MMBT2222ALT1G |
|
Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C) |
|
|
||||
| MMBT2222ALT1G |
|
Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C) | ONSEMICONDUCTOR |
|
|
|||
| MMBT2222ALT1G |
|
Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C) | ON SEMICONDUCTO |
|
|
|||
| MMBT2222ALT1G |
|
Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C) | ONS-FAIR |
|
|
|||
| MMBT2222ALT1G |
|
Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C) | ONSEMI |
|
|
|||
| RC0402JR-0724RL | YAGEO | 4 322 490 |
0.40 >1000 шт. 0.08 |
|||||
| RC0402JR-0724RL |
|
|
||||||
| T491D476K010AT | KEMET |
|
|
|||||
| T491D476K010AT | KEMET | 4 137 |
|
|||||
| T491D476K010AT |
|
|
||||||
| T491D476K010AT | МЕКСИКА |
|
|
