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Версия для печати
| FET Feature | Standard |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 3.4A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 47nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 50V |
| Power - Max | 79W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
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IRLR9343 (MOSFET) HEXFET Power MOSFETs Discrete P-Channel
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| IRLR3915TR | INTERNATIONAL RECTIFIER |
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| IRLR3915TR | INFINEON |
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| MBRD1035CTLT4G | ON SEMICONDUCTOR |
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| MBRD1035CTLT4G | ONS |
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| MBRD1035CTLT4G | ON SEMICONDUCTOR |
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| MBRD1035CTLT4G |
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TL598CD |
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420.00 | |||||
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TL598CD | Texas Instruments | 1 | 162.50 | ||||
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TL598CD | TEXAS |
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TL598CD | 4-7 НЕДЕЛЬ | 147 |
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| UCC37322D | TEXAS INSTRUMENTS | 5 | 125.80 | |||||
| UCC37322D |
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| UCC37322D | TEXAS |
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| UCC37322D | 4-7 НЕДЕЛЬ | 431 |
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К521СА4 | 11 | 347.76 | |||||
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К521СА4 | РИГА |
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К521СА4 | 11 | 347.76 |