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Версия для печати
| Корпус | PG-SOT343-4 |
| Корпус (размер) | SC-82A, SOT-343 |
| Тип монтажа | Поверхностный |
| Current - Collector (Ic) (Max) | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 20mA, 4V |
| Power - Max | 160mW |
| Gain | 21dB |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1.8GHz |
| Frequency - Transition | 25GHz |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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BFP420 NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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3314G-1-100E |
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Bourns Inc |
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3314G-1-100E |
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BOURNS | 28 | 51.82 | ||
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3314G-1-100E |
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3314J-1-500E |
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Потенциометр 50 Ом | BOURNS |
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3314J-1-500E |
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Потенциометр 50 Ом | BOURNS |
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3314J-1-500E |
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Потенциометр 50 Ом | Bourns Inc |
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3314J-1-500E |
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Потенциометр 50 Ом |
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| CECL-1200/96 122K |
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7.80 | ||||||
| CECL-1200/96 122K | R6 |
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| GRM188R71E104KA01D | MURATA | 132 | 2.07 | |||||
| GRM188R71E104KA01D | MURATA | 15 360 |
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| GRM188R71E104KA01D | Murata Electronics North America |
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| GRM188R71E104KA01D | 184 |
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| GRM188R71E104KA01D | MUR | 244 907 |
1.32 >100 шт. 0.66 |
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HEF4511BT,652 |
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NXP Semiconductors |
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HEF4511BT,652 |
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NXP |
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HEF4511BT,652 |
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NEX |
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