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Версия для печати
| Voltage - Collector Emitter Breakdown (Max) | 250V |
| Current - Collector (Ic) (Max) | 16A |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 3.2A, 16A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 8A, 5V |
| Power - Max | 200W |
| Frequency - Transition | 4MHz |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-264-3, TO-3BPL |
| Корпус | TO-264 |
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MJL21194 (Мощные биполярные транзисторы) 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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1N4007 |
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DC COMPONENTS | 58 012 | 1.02 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 324 931 | 1.48 | ||
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1N4007 |
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DIOTEC | 71 806 | 2.80 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 184 475 | 1.39 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 879 | 5.47 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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2 128 | 3.70 | |||
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 27 | 1.54 | ||
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1N4007 |
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HOTTECH | 60 724 | 1.06 | ||
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1N4007 |
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KLS | 31 200 | 2.07 | ||
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1N4007 |
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YS | 2 311 | 1.38 | ||
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1N4007 |
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YANGJIE | 33 456 | 1.47 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU |
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1N4007 |
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CHINA |
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 40 062 | 1.18 | ||
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1N4007 |
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TWGMC | 28 087 |
1.47 >500 шт. 0.49 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 85 | 1.65 | ||
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1N4007 |
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ASEMI | 1 |
1.46 >100 шт. 0.73 |
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1N4007 |
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YANGZHOU YANGJIE |
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1N4007 |
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KEEN SIDE | 365 522 |
1.12 >100 шт. 0.56 |
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1N4007 |
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MERRYELC | 212 786 | 1.56 | ||
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1N4007 |
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82582 |
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1N4007 |
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81682 |
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1N4007 |
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TRR | 542 640 |
1.36 >100 шт. 0.68 |
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1N4007 |
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71682 |
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2N3055 |
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Транзистор NPN 100В, 15А | ST MICROELECTRONICS |
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2N3055 |
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Транзистор NPN 100В, 15А | MOTOROLA |
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2N3055 |
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Транзистор NPN 100В, 15А | ON SEMICONDUCTOR |
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2N3055 |
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Транзистор NPN 100В, 15А | 344 | 101.40 | ||
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2N3055 |
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Транзистор NPN 100В, 15А | MOTOROLA |
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2N3055 |
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Транзистор NPN 100В, 15А | ON SEMICONDUCTOR |
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2N3055 |
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Транзистор NPN 100В, 15А | ST MICROELECTRONICS SEMI |
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2N3055 |
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Транзистор NPN 100В, 15А | STMicroelectronics |
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2N3055 |
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Транзистор NPN 100В, 15А | PMC |
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2N3055 |
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Транзистор NPN 100В, 15А | МАЛАЙЗИЯ |
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2N3055 |
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Транзистор NPN 100В, 15А | ISC |
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2N3055 |
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Транзистор NPN 100В, 15А | ST1 |
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2N3055 |
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Транзистор NPN 100В, 15А | ST MICROELECTRO |
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2N3055 |
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Транзистор NPN 100В, 15А | STMICROELECTR |
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2N3055 |
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Транзистор NPN 100В, 15А | КИТАЙ |
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2N3055 |
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Транзистор NPN 100В, 15А | NO NAME |
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2N3055 |
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Транзистор NPN 100В, 15А | ISCSEMI |
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2N3055 |
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Транзистор NPN 100В, 15А | 1 |
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MBR160 | FAI/QTC |
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MBR160 | ON SEMICONDUCTOR |
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MBR160 |
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20.60 | |||||
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MBR160 | ON SEMICONDUCTOR |
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MBR160 | Vishay/Semiconductors |
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MBR160 | YJ | 9 614 |
1.58 >100 шт. 0.79 |
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MJL21193 |
|
Транзистор биполярный большой мощности PNP 250V, 16A, 200W | ON SEMICONDUCTOR |
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MJL21193 |
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Транзистор биполярный большой мощности PNP 250V, 16A, 200W | ONS |
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MJL21193 |
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Транзистор биполярный большой мощности PNP 250V, 16A, 200W |
|
405.16 | ||
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MJL21193 |
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Транзистор биполярный большой мощности PNP 250V, 16A, 200W | МАЛАЙЗИЯ |
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MJL21193 |
|
Транзистор биполярный большой мощности PNP 250V, 16A, 200W | 1 |
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| NE-2 6X16 | 52 160 | 1.97 | ||||||
| NE-2 6X16 | 52 160 | 1.97 |