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Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | QFET™ |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 1.9 Ohm @ 3.3A, 10V |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 6.6A |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1680pF @ 25V |
Power - Max | 56W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 Full Pack |
Корпус | TO-220F |
Product Change Notification | Design/Process Change Notification 26/June/2007 |
FQPF7N80C (MOSFET) 800V N-Channel MOSFET
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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2N6039 | ON SEMICONDUCTOR |
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2N6039 |
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2N6039 | ON SEMICONDUCTOR | 692 |
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2N6039 | STMicroelectronics |
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2N6039 | ST MICROELECTRO |
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2N6039 | ST MICROELECTRONICS |
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2N6039 | ISCSEMI |
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2N6039 | КИТАЙ |
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BCP69-16/T1 |
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Транзистор биполярный SMD |
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15.20 | ||||
BCP69-16/T1 |
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Транзистор биполярный SMD | NXP |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA | NXP |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA | WEEN/NXP | 14 748 | 4.66 | |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA | WEEN / NXP |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA | WEEN |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA | NEX-NXP | 688 | 16.53 | |
KM681000BLG-5L | SEC |
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KM681000BLG-5L | SAMSUNG |
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KM681000BLG-5L |
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KM681000BLG-5L | 4-7 НЕДЕЛЬ | 77 |
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MJD122T4G | ON SEMICONDUCTOR |
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MJD122T4G | ONS |
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MJD122T4G | ON SEMICONDUCTOR |
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MJD122T4G |
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Корзина
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